NTHD3102CT1G ON Semiconductor, NTHD3102CT1G Datasheet - Page 5

• Manufacturer Part Number: NTHD3102CT1G
• Description: MOSFET N/P-CH COMPL 20V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD3102CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A, 3.1A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 7.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 510pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD3102CT1G; NTHD3102CT1GOSTR

0.044
0.036
0.028
0.08
0.06
0.04
0.02
0.02
8
6
4
2
0
0
0
0
V
T
1
V
Figure 3. On−Resistance vs. Drain Current
Figure 5. On−Resistance vs. Drain Current
GS
J
DS
= 25°C
Figure 1. On−Region Characteristics
= 4.5 V
V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
GS
2
2
2
= 8 V to 1.8 V
I
D,
I
D,
3
DRAIN CURRENT (AMPS)
DRAIN CURRENT (AMPS)
1.6 V
4
4
T
V
4
T
T
V
J
J
GS
J
GS
= 125°C
= −55°C
= 25°C
5
= 2.5 V
TYPICAL N−CHANNEL PERFORMANCE CURVES
= 4.5 V
6
6
6
7
(T
T
8
J
J
8
8
= 25°C
= 25°C unless otherwise noted)
1.4 V
1.2 V
1.0 V
http://onsemi.com
9
NTHD3102C
10
10
10
5
0.02
0.08
0.06
0.04
1.6
1.4
1.2
1.0
0.8
0.6
−50
8
6
4
2
0
0
Figure 4. On−Resistance vs. Drain Current and
0
I
V
D
GS
V
= 4 A
GS
−25
Figure 6. On−Resistance Variation with
V
= 4.5 V
GS
= 2.5 V
Figure 2. Transfer Characteristics
, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.4
T
2
J
, JUNCTION TEMPERATURE (°C)
0
I
D,
DRAIN CURRENT (AMPS)
125°C
Temperature
25
Temperature
0.8
4
T
T
T
25°C
J
J
J
= −55°C
= 125°C
= 25°C
50
1.2
6
75
T
J
= −55°C
100
1.6
8
125
2.0
150
10