NTHD3102CT1G ON Semiconductor, NTHD3102CT1G Datasheet - Page 7

• Manufacturer Part Number: NTHD3102CT1G
• Description: MOSFET N/P-CH COMPL 20V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD3102CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A, 3.1A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 7.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 510pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD3102CT1G; NTHD3102CT1GOSTR

0.09
0.08
0.07
0.06
0.05
0.04
0.09
0.08
0.07
0.06
0.05
0.04
0.1
0.1
8
6
4
2
0
0
0
0
T
V
−V
Figure 14. On−Resistance vs. Drain Current
Figure 16. On−Resistance vs. Drain Current
J
1
GS
= 25°C
DS
Figure 12. On−Region Characteristics
= −4.5 V
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
−2 V
2
V
2
2
GS
−I
−I
D,
D,
= −8 V to −4 V
3
DRAIN CURRENT (AMPS)
DRAIN CURRENT (AMPS)
4
4
4
V
V
T
T
GS
GS
J
J
T
= 125°C
J
= −55°C
5
= 25°C
= −2.5 V
= −4.5 V
TYPICAL P−CHANNEL PERFORMANCE CURVES
6
6
6
7
(T
8
T
J
8
8
J
= 25°C unless otherwise noted)
= 25°C
−1.8 V
−1.6 V
−1.4 V
−1.2 V
−1.0 V
http://onsemi.com
9
NTHD3102C
10
10
10
7
0.16
0.14
0.12
0.10
0.08
0.06
0.04
1.6
1.4
1.2
1.0
0.8
0.6
−50
8
6
4
2
0
0
0
I
V
Figure 15. On−Resistance vs. Drain Current
D
V
GS
= −4 A
GS
−25
−V
Figure 17. On−Resistance Variation with
= −4.5 V
0.4
= −2.5 V
GS
Figure 13. Transfer Characteristics
T
, GATE−TO−SOURCE VOLTAGE (VOLTS)
2
J
, JUNCTION TEMPERATURE (°C)
125°C
−I
0
D,
0.8
25°C
DRAIN CURRENT (AMPS)
and Temperature
25
Temperature
4
T
T
1.2
T
J
J
J
= −55°C
= 125°C
= 25°C
T
50
J
= −55°C
1.6
6
75
2.0
100
8
2.4
125
150
2.8
10