NTHD3102CT1G ON Semiconductor, NTHD3102CT1G Datasheet - Page 3

• Manufacturer Part Number: NTHD3102CT1G
• Description: MOSFET N/P-CH COMPL 20V CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD3102CT1G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 45 mOhm @ 4.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4A, 3.1A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 7.9nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 510pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD3102CT1G; NTHD3102CT1GOSTR

5. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
CHARGES, CAPACITANCES AND GATE RESISTANCE
SWITCHING CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Drain−to−Source On Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Parameter
(continued) (T
Symbol
Q
V
R
Q
t
t
t
t
C
C
d(OFF)
d(OFF)
GS(TH)
C
G(TOT)
Q
Q
d(ON)
d(ON)
DS(on)
g
G(TH)
OSS
RSS
ISS
t
t
t
t
FS
GS
GD
r
f
r
f
N/P
N
N
N
N
N
N
N
N
N
N
N
N
N
P
P
P
P
P
P
P
P
P
P
P
P
P
J
http://onsemi.com
= 25°C unless otherwise noted)
NTHD3102C
f = 1.0 MHz, V
V
V
V
V
GS
GS
GS
GS
V
V
V
V
GS
GS
GS
GS
3
= −4.5 V, V
= −4.5 V, V
= −4.5 V, V
= −4.5 V, V
V
V
V
V
= 4.5 V, V
= 4.5 V, V
= 4.5 V, V
= 4.5 V, V
V
V
V
GS
GS
V
V
V
I
GS
GS
GS
DS
V
I
D
GS
D
GS
GS
GS
DS
= −3.2 A, R
= V
= −4.5 V, V
Test Conditions
= 4.4 A, R
= −4.5 V , I
= −10 V , I
= −2.5 V, I
= −1.8 V, I
= 4.5 V, V
= 2.5 V , I
= 1.8 V , I
= 4.5 V , I
= 10 V, I
DS
GS
DS
DS
DS
DS
DS
DS
DS
DS
= 0 V
= −10 V, I
= −10 V, I
= −10 V, I
= −10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
= 10 V, I
G
D
DD
DD
G
D
D
D
D
D
D
D
= 2.5 W
= 4.4 A
= −2.5 A
= −0.6 A
= −3.2 A
= 2.5 W
= −3.2 A
= 4.1 A
= 1.9 A
= 4.4 A
= 10 V,
= −10 V,
I
V
V
V
I
D
V
V
V
D
D
D
D
D
D
D
D
D
DS
DS
DS
DS
DS
DS
= −250 mA
= 4.4 A
= 4.4 A
= 4.4 A
= 4.4 A
= 250 mA
= −3.2 A
= −3.2 A
= −3.2 A
= −3.2 A
= −10 V
= −10 V
= −10 V
= 10 V
= 10 V
= 10 V
−0.4
Min
0.4
0.96
0.98
1.56
1.64
15.9
15.7
16.9
16.4
15.0
Typ
105
510
650
100
100
7.7
5.9
5.8
6.6
1.2
1.4
7.2
4.6
6.4
29
64
37
83
48
50
50
Max
−1.2
110
150
1.2
7.9
8.9
45
80
50
70
Unit
mW
nC
pF
ns
V
S