BLF6G22-45 NXP Semiconductors, BLF6G22-45 Datasheet - Page 8

• Manufacturer Part Number: BLF6G22-45
• Description: RF MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-45

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.2 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Package / Case: SOT-608-3
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2.5W(Typ)
• Power Gain (typ)@vds: 18.5@28VdB
• Frequency (min): 2GHz
• Frequency (max): 2.2GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 5S
• Drain Source Resistance (max): 200(Typ)@6.15Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 13%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22-45,112

NXP Semiconductors
10. Abbreviations
11. Revision history
Table 10.
BLF6G22-45_2
Product data sheet
Document ID
BLF6G22-45_2
Modifications:
BLF6G22-45_BLF6G22S-45_1 20080219
Revision history
Table 9.
Acronym
3GPP
CCDF
CW
DPCH
IMD
LDMOS
PAR
PDPCH
RF
VSWR
W-CDMA
Release date Data sheet status
20080421
•
•
Abbreviations
The combined data sheet is split up into two separate data sheets.
Table 1
Description
3rd Generation Partnership Project
Complementary Cumulative Distribution Function
Continuous Waveform
Dedicated Physical CHannel
InterModulation Distortion
Laterally Diffused Metal-Oxide Semiconductor
Peak-to-Average power Ratio
transmission Power of the Dedicated Physical CHannel
Radio Frequency
Voltage Standing-Wave Ratio
Wideband Code Division Multiple Access
and
Product data sheet
Preliminary data sheet -
Table
Rev. 02 — 21 April 2008
7: ACPR values changed.
Change notice Supersedes
-
BLF6G22-45_BLF6G22S-45_1
-
Power LDMOS transistor
BLF6G22-45
© NXP B.V. 2008. All rights reserved.
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