blf6g22-180rn NXP Semiconductors, blf6g22-180rn Datasheet

blf6g22-180rn

Manufacturer Part Number

blf6g22-180rn

Description

Power Ldmos Transistor

Manufacturer

NXP Semiconductors

Datasheet

1.BLF6G22-180RN.pdf (11 pages)

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1. Product proﬁle

CAUTION

1.1 General description

1.2 Features

180 W LDMOS power transistor for base station applications at frequencies from

2000 MHz to 2200 MHz.

Table 1.

Typical RF performance at T

[1]

Mode of operation

2-carrier W-CDMA

BLF6G22-180RN;

BLF6G22LS-180RN

Power LDMOS transistor

Rev. 01 — 20 November 2008

Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz,

a supply voltage of 30 V and an I

Easy power control

Integrated ESD protection

Enhanced ruggedness

High efﬁciency

Excellent thermal stability

Designed for broadband operation (2000 MHz to 2200 MHz)

Internally matched for ease of use

Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier;

carrier spacing 10 MHz.

This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken

during transport and handling.

Average output power = 40 W

Power gain = 16.0 dB

Efﬁciency = 25 %

IMD3 = 38 dBc

ACPR = 42 dBc

Typical performance

(MHz)

2110 to 2170

case

= 25 C in a class-AB production test circuit.

of 1400 mA:

(V)

(W)

L(AV)

(dB)

16.0

(%)

Product data sheet

IMD3

(dBc)

[1]

ACPR

(dBc)

[1]

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