BLF6G22-180PN,135 NXP Semiconductors, BLF6G22-180PN,135 Datasheet
BLF6G22-180PN,135
Specifications of BLF6G22-180PN,135
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BLF6G22-180PN,135 Summary of contents
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... BLF6G22-180PN; BLF6G22LS-180PN Power LDMOS transistor Rev. 04 — 4 March 2010 1. Product profile 1.1 General description 180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; ...
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... Table 2. Pin BLF6G22-180PN (SOT539A BLF6G22LS-180PN (SOT539B [1] Connected to flange. 3. Ordering information Table 3. Type number BLF6G22-180PN BLF6G22LS-180PN - BLF6G22-180PN_22LS-180PN_3 Product data sheet Pinning Description drain1 drain2 gate1 gate2 source drain1 drain2 gate1 gate2 source Ordering information Package Name Description - flanged balanced LDMOST ceramic package; ...
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... All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 March 2010 BLF6G22(LS)-180PN Power LDMOS transistor Conditions Type = 80 °C; T BLF6G22-180PN case L(AV) BLF6G22LS-180PN Conditions Min 0 144 mA 1.575 1 800 mA 1.725 2.1 ...
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... Mode of operation: 1-carrier W-CDMA; PAR 7 0.01 % probability on CCDF; 3GPP test model PDPCH 1600 mA Symbol Parameter PAR O 7.1 Ruggedness in class-AB operation The BLF6G22-180PN and BLF6G22LS-180PN are capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions: V Fig 1. BLF6G22-180PN_22LS-180PN_3 Product data sheet Application information = 2112.5 MHz ...
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... (W) L(AV) = 2162.5 MHz 2167 Fig 5. All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 March 2010 BLF6G22(LS)-180PN Power LDMOS transistor −10 IMD (dBc) −30 −50 −70 0 100 200 1600 mA 2170 MHz 2170.1 MHz. 2 Two-tone intermodulation distortion as a function of peak envelope load power; typical values − ...
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... (W) L(AV) = 2157.5 MHz 2167 Fig 7. All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 March 2010 BLF6G22(LS)-180PN Power LDMOS transistor −20 −30 ACPR −40 −50 − 1600 mA 2157.5 MHz MHz; carrier spacing 10 MHz. 2-carrier W-CDMA adjacent channel power ratio and third order intermodulation distortion as functions of average load power ...
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... Product data sheet See Table 9 for list of components. Test circuit for operation at 2110 MHz and 2170 MHz All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 March 2010 BLF6G22(LS)-180PN Power LDMOS transistor C10 C11 R2 C12 R3 C14 C15 C16 output 50 Ω ...
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... All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 March 2010 BLF6G22(LS)-180PN Power LDMOS transistor C10 C11 C13 C12 OUTPUT C14 C15 C16 TB BLF6G22-180PN 001aah640 = 3.5 and thickness = 0.76 mm. r Value 10 pF 4.7 μF 220 220 μ 100 0 Ω 5.6 Ω ...
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... REFERENCES JEDEC EIAJ All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 March 2010 BLF6G22(LS)-180PN Power LDMOS transistor ...
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... References JEDEC JEITA All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 March 2010 BLF6G22(LS)-180PN Power LDMOS transistor 25.53 3.48 2 ...
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... Objective data sheet 20080423 Product data sheet 20080221 Preliminary data sheet All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 March 2010 BLF6G22(LS)-180PN Power LDMOS transistor Change notice Supersedes - BLF6G22-180PN_ 22LS-180PN_3 - BLF6G22-180PN_2 - BLF6G22-180PN_1 - - © NXP B.V. 2010. All rights reserved ...
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... NXP Semiconductors’ warranty of the All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 March 2010 BLF6G22(LS)-180PN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com All information provided in this document is subject to legal disclaimers. Rev. 04 — 4 March 2010 BLF6G22(LS)-180PN Power LDMOS transistor © NXP B.V. 2010. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2010. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Document identifier: BLF6G22-180PN_22LS-180PN_3 All rights reserved. Date of release: 4 March 2010 ...