BLF6G22-45 NXP Semiconductors, BLF6G22-45 Datasheet - Page 4

RF MOSFET Power LDMOS TNS

BLF6G22-45

Manufacturer Part Number
BLF6G22-45
Description
RF MOSFET Power LDMOS TNS
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF6G22-45

Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
MOSFET Power
Resistance Drain-source Rds (on)
0.2 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
13 V
Maximum Operating Temperature
+ 225 C
Package / Case
SOT-608-3
Channel Type
N
Channel Mode
Enhancement
Drain Source Voltage (max)
65V
Output Power (max)
2.5W(Typ)
Power Gain (typ)@vds
18.5@28VdB
Frequency (min)
2GHz
Frequency (max)
2.2GHz
Package Type
CDFM
Pin Count
3
Forward Transconductance (typ)
5S
Drain Source Resistance (max)
200(Typ)@6.15Vmohm
Operating Temp Range
-65C to 225C
Drain Efficiency (typ)
13%
Mounting
Screw
Mode Of Operation
2-Carrier W-CDMA
Number Of Elements
1
Vswr (max)
10
Screening Level
Military
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF6G22-45,112

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BLF6G22-45
Manufacturer:
NXP/恩智浦
Quantity:
20 000
NXP Semiconductors
BLF6G22-45_2
Product data sheet
Fig 2.
(dB)
G
p
20
19
18
17
16
15
14
0
V
f
Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
2
DS
= 2170.1 MHz.
= 28 V; I
10
G
D
p
20
Dq
= 405 mA; f
Fig 1.
30
40
1
V
One-tone CW power gain and drain efficiency as functions of load power; typical
values
= 2170 MHz;
DS
50
= 28 V; I
P
L(PEP)
001aah605
60
Dq
(W)
(dB)
G
= 405 mA; f = 2170 MHz.
70
p
Rev. 02 — 21 April 2008
22
20
18
16
14
12
60
50
40
30
20
10
0
(%)
0
D
10
Fig 3.
20
(dBc)
IMD
10
20
30
40
50
60
70
V
f
Intermodulation distortion as a function of
peak envelope load power; typical values
0
2
30
DS
= 2170.1 MHz.
= 28 V; I
10
40
20
Dq
= 405 mA; f
50
001aah604
P
G
30
D
L
p
(W)
60
Power LDMOS transistor
BLF6G22-45
40
60
50
40
30
20
10
(%)
1
D
= 2170 MHz;
50
IMD3
IMD5
IMD7
P
© NXP B.V. 2008. All rights reserved.
L(PEP)
001aah606
60
(W)
70
4 of 10

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