BLF6G22-45 /T3 NXP Semiconductors, BLF6G22-45 /T3 Datasheet
BLF6G22-45 /T3
Specifications of BLF6G22-45 /T3
Related parts for BLF6G22-45 /T3
BLF6G22-45 /T3 Summary of contents
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... BLF6G22-45 Power LDMOS transistor Rev. 02 — 21 April 2008 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. RF performance at T Mode of operation 2-carrier W-CDMA [1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 0.01 % probability on CCDF per carrier; ...
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... Limiting values Parameter Conditions drain-source voltage gate-source voltage storage temperature junction temperature Thermal characteristics Parameter thermal resistance from junction to case Rev. 02 — 21 April 2008 BLF6G22-45 Power LDMOS transistor Simplified outline Graphic symbol 1 [ Min - 0 Conditions ...
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... Mode of operation: 2-carrier W-CDMA; PAR 7 0.01 % probability on CCDF; 3GPP test model PDPCH performance at V class-AB production test circuit. Symbol P L(AV ACPR 7.1 Ruggedness in class-AB operation The BLF6G22-45 is capable of withstanding a load mismatch corresponding to VSWR = through all phases under the following conditions 405 mA BLF6G22-45_2 Product data sheet Characteristics Conditions drain-source breakdown V voltage ...
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... BLF6G22-45_2 Product data sheet (dB 405 mA 2170 MHz One-tone CW power gain and drain efficiency as functions of load power; typical values 001aah605 60 IMD D (%) (dBc (W) L(PEP) = 2170 MHz; 1 Fig 3. Rev. 02 — 21 April 2008 BLF6G22-45 Power LDMOS transistor 001aah604 60 D (%) ( IMD3 30 IMD5 40 IMD7 405 mA 2170 MHz; DS ...
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... P (W) L(AV) = 2162.5 MHz; 1 Fig See Table 8 for list of components. Test circuit for operation at 2110 MHz and 2170 MHz Rev. 02 — 21 April 2008 BLF6G22-45 Power LDMOS transistor 405 mA 2162.5 MHz 2167.5 MHz; carrier spacing 5 MHz. 2 2-carrier W-CDMA adjacent power channel ratio as a function of average load power; ...
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... Rev. 02 — 21 April 2008 BLF6G22-45 Power LDMOS transistor C16 C15 C10 C14 C11 C12 C13 ...
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... REFERENCES JEDEC EIAJ Rev. 02 — 21 April 2008 BLF6G22-45 Power LDMOS transistor 1.70 20.45 9.91 15.24 0.25 0.51 1.35 9 ...
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... PAR PDPCH RF VSWR W-CDMA 11. Revision history Table 10. Revision history Document ID BLF6G22-45_2 Modifications: BLF6G22-45_BLF6G22S-45_1 20080219 BLF6G22-45_2 Product data sheet Abbreviations Description 3rd Generation Partnership Project Complementary Cumulative Distribution Function Continuous Waveform Dedicated Physical CHannel InterModulation Distortion Laterally Diffused Metal-Oxide Semiconductor Peak-to-Average power Ratio ...
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... Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. http://www.nxp.com salesaddresses@nxp.com Rev. 02 — 21 April 2008 BLF6G22-45 Power LDMOS transistor © NXP B.V. 2008. All rights reserved ...
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... Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. © NXP B.V. 2008. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com All rights reserved. Date of release: 21 April 2008 Document identifier: BLF6G22-45_2 ...