BLF6G22-45 NXP Semiconductors, BLF6G22-45 Datasheet - Page 3

• Manufacturer Part Number: BLF6G22-45
• Description: RF MOSFET Power LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G22-45

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: MOSFET Power
• Resistance Drain-source Rds (on): 0.2 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: 13 V
• Maximum Operating Temperature: + 225 C
• Package / Case: SOT-608-3
• Channel Type: N
• Channel Mode: Enhancement
• Drain Source Voltage (max): 65V
• Output Power (max): 2.5W(Typ)
• Power Gain (typ)@vds: 18.5@28VdB
• Frequency (min): 2GHz
• Frequency (max): 2.2GHz
• Package Type: CDFM
• Pin Count: 3
• Forward Transconductance (typ): 5S
• Drain Source Resistance (max): 200(Typ)@6.15Vmohm
• Operating Temp Range: -65C to 225C
• Drain Efficiency (typ): 13%
• Mounting: Screw
• Mode Of Operation: 2-Carrier W-CDMA
• Number Of Elements: 1
• Vswr (max): 10
• Screening Level: Military
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G22-45,112

NXP Semiconductors
6. Characteristics
7. Application information
BLF6G22-45_2
Product data sheet
7.1 Ruggedness in class-AB operation
Table 6.
T
Table 7.
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1 to 64 PDPCH; f
RF performance at V
class-AB production test circuit.
The BLF6G22-45 is capable of withstanding a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: V
I
Symbol Parameter
V
V
V
I
I
I
g
R
Symbol
P
G
ACPR
Dq
DSS
DSX
GSS
j
fs
D
(BR)DSS
GS(th)
GSq
L(AV)
DS(on)
p
= 25 C per section; unless otherwise specified.
= 405 mA; P
drain-source breakdown
voltage
gate-source threshold voltage
gate-source quiescent voltage V
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
Parameter
average output power
power gain
drain efficiency
adjacent channel power ratio
Characteristics
Application information
L
= 45 W (CW); f = 2170 MHz.
DS
= 28 V; I
Rev. 02 — 21 April 2008
1
= 2112.5 MHz; f
Dq
= 405 mA; T
Conditions
V
V
V
V
V
V
V
V
I
D
2
GS
DS
DS
GS
GS
DS
GS
DS
GS
= 2.5 A
= 2117.5 MHz; f
case
= 10 V; I
= 28 V; I
= 10 V
= 10 V; I
= 0 V; I
= 0 V; V
= V
= 11 V; V
= V
Conditions
P
P
P
GS(th)
GS(th)
L(AV)
L(AV)
L(AV)
= 25 C; unless otherwise specified; in a
D
DS
D
D
D
= 2.5 W
= 2.5 W
= 2.5 W
= 0.5 mA
+ 3.75 V;
+ 3.75 V;
DS
= 72 mA
= 300 mA
= 3.5 A
= 28 V
= 0 V
3
= 2162.5 MHz; f
Power LDMOS transistor
Min
-
17.3
10.5
-
BLF6G22-45
Min
65
1.4
1.65
-
-
-
-
-
DS
Typ
2.5
18.5
13
= 28 V;
Typ
-
1.9
2.15
-
12.5
-
5
0.2
© NXP B.V. 2008. All rights reserved.
49
4
= 2167.5 MHz;
Max
-
19.7
-
Max
-
2.4
2.65
1.5
-
150
-
-
46
3 of 10
Unit
W
dB
%
dBc
Unit
V
V
V
A
nA
S
A