BLF6G27S-45 NXP Semiconductors, BLF6G27S-45 Datasheet - Page 9

• Manufacturer Part Number: BLF6G27S-45
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27S-45

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.385 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 20 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27S-45,112

NXP Semiconductors
8. Test information
BLF6G27-45_BLF6G27S-45_3
Product data sheet
Fig 12. Test circuit for operation at 2500 MHz to 2700 MHz
50
input
See
Table 8
V
for list of components.
GG
C1
C6
C5
C2
C3
Rev. 03 — 15 December 2008
C4
R1
BLF6G27-45; BLF6G27S-45
Q1
C7
C8
C12
C10
C9
C13
C11
WiMAX power LDMOS transistor
R2
L1
© NXP B.V. 2008. All rights reserved.
C14
001aah416
V
+28 V
50
output
DD
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