BLF6G27S-45 NXP Semiconductors, BLF6G27S-45 Datasheet - Page 12

• Manufacturer Part Number: BLF6G27S-45
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27S-45

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.385 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 20 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27S-45,112

NXP Semiconductors
9. Package outline
Fig 14. Package outline SOT608A
BLF6G27-45_BLF6G27S-45_3
Product data sheet
Flanged ceramic package; 2 mounting holes; 2 leads
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
inches
UNIT
mm
VERSION
OUTLINE
SOT608A
0.182
0.148
4.62
3.76
A
H
0.285
0.275
7.24
6.99
b
U 2
A
A
0.006
0.004
0.15
0.10
c
IEC
10.21
10.01
0.402
0.394
D
10.29
10.03
0.405
0.395
D 1
10.21
10.01
0.402
0.394
JEDEC
E
U 1
D 1
D
q
b
10.29
10.03
0.405
0.395
REFERENCES
Rev. 03 — 15 December 2008
E 1
1
2
3
0
0.045
0.035
1.14
0.89
F
BLF6G27-45; BLF6G27S-45
w 2
15.75
14.73
0.620
0.580
EIAJ
H
scale
M
5
C
C
0.130
0.115
3.30
2.92
M
p
F
B
p
10 mm
0.067
0.053
1.70
1.35
Q
w 1
15.24
0.600
M
q
A
M
20.45
20.19
0.805
0.795
U 1
B
WiMAX power LDMOS transistor
M
PROJECTION
0.390
0.380
EUROPEAN
9.91
9.65
U 2
E 1
0.010 0.020
0.25
w 1
c
Q
0.51
w 2
© NXP B.V. 2008. All rights reserved.
ISSUE DATE
01-02-22
02-02-11
E
SOT608A
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