BLF6G27S-45 NXP Semiconductors, BLF6G27S-45 Datasheet - Page 6

• Manufacturer Part Number: BLF6G27S-45
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27S-45

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.385 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 20 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27S-45,112

NXP Semiconductors
BLF6G27-45_BLF6G27S-45_3
Product data sheet
Fig 5.
(dB)
G
p
20
16
12
8
1
I
Power gain and drain efficiency as functions of
CW load power; typical values
Dq
= 350 mA; f = 2600 MHz; T
7.4 Continuous wave
10
G
D
p
case
P
L
(W)
= 25 C; V
001aah410
Rev. 03 — 15 December 2008
10
DS
2
60
40
20
0
= 28 V.
(%)
D
BLF6G27-45; BLF6G27S-45
Fig 6.
(dB)
G
(1) V
(2) V
(3) V
(4) V
(5) V
(6) V
p
20
16
12
8
1
I
Power gain as function of CW load power;
typical values
Dq
DS
DS
DS
DS
DS
DS
= 350 mA; f = 2600 MHz; T
= 32 V
= 28 V
= 24 V
= 20 V
= 16 V
= 12 V
WiMAX power LDMOS transistor
10
(6)
P
(5)
case
L(CW)
(4)
= 25 C.
© NXP B.V. 2008. All rights reserved.
(W)
(3)
001aah411
(2)
(1)
10
2
6 of 16