BLF6G27S-45 NXP Semiconductors, BLF6G27S-45 Datasheet - Page 13

• Manufacturer Part Number: BLF6G27S-45
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27S-45

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.385 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 20 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27S-45,112

NXP Semiconductors
Fig 15. Package outline SOT608B
BLF6G27-45_BLF6G27S-45_3
Product data sheet
Ceramic earless flanged package; 2 leads
DIMENSIONS (mm dimensions are derived from the original inch dimensions)
UNIT
inch
mm
VERSION
OUTLINE
SOT608B
0.182
0.148
4.62
3.76
A
0.285
0.275
7.24
6.99
b
0.006
0.004
0.15
0.10
c
IEC
H
A
10.21
10.01
0.402
0.394
D
10.29
10.03
0.405
0.395
D
1
10.21
10.01
0.402
0.394
JEDEC
E
U
D
b
1
D
1
10.29
10.03
0.405
0.395
REFERENCES
E
1
Rev. 03 — 15 December 2008
3
1
2
0.045
0.035
1.14
0.89
F
0
w
15.75
14.73
0.620
0.580
1
JEITA
F
M
H
BLF6G27-45; BLF6G27S-45
A
scale
A
0.067
0.053
M
1.70
1.35
Q
5 mm
10.24
0.403
0.393
9.98
U
1
U
10.24
0.403
0.393
2
9.98
U
2
E
1
0.020
0.51
w
1
Q
WiMAX power LDMOS transistor
PROJECTION
EUROPEAN
c
E
© NXP B.V. 2008. All rights reserved.
ISSUE DATE
06-11-27
06-12-06
SOT608B
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