BLF6G27S-45 NXP Semiconductors, BLF6G27S-45 Datasheet - Page 4

• Manufacturer Part Number: BLF6G27S-45
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27S-45

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.385 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 20 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27S-45,112

NXP Semiconductors
BLF6G27-45_BLF6G27S-45_3
Product data sheet
Fig 1.
(dB)
G
p
22
20
18
16
14
12
10
V
N-CDMA; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz;
instantaneous bandwidth = 30 kHz.
Power gain and drain efficiency as functions of
average load power; typical values
DS
1
= 28 V; I
7.2 Single carrier N-CDMA performance
Dq
1
= 350 mA; f = 2600 MHz; single carrier
G
D
p
10
P
L(AV)
001aah406
(W)
Rev. 03 — 15 December 2008
10
2
50
40
30
20
10
0
(%)
D
BLF6G27-45; BLF6G27S-45
Fig 2.
ACPR
(dBc)
(1) Low frequency component
(2) High frequency component
30
40
50
60
70
80
10
V
N-CDMA; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz;
instantaneous bandwidth = 30 kHz.
Adjacent channel power ratio as function of
average load power; typical values
1
DS
ACPR
ACPR
ACPR
= 28 V; I
1500k
1980k
885k
Dq
WiMAX power LDMOS transistor
1
= 350 mA; f = 2600 MHz; single carrier
(1)
(2)
(1)
(2)
10
P
(2)
(1)
L(AV)
© NXP B.V. 2008. All rights reserved.
001aah407
(W)
10
2
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