BLF6G27S-45 NXP Semiconductors, BLF6G27S-45 Datasheet - Page 16

• Manufacturer Part Number: BLF6G27S-45
• Description: RF MOSFET Small Signal LDMOS TNS
• Manufacturer: NXP Semiconductors

Specifications of BLF6G27S-45

• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.385 Ohms
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: - 0.5 V, 13 V
• Continuous Drain Current: 20 A
• Maximum Operating Temperature: + 225 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 65 C
• Package / Case: CDFM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF6G27S-45,112

NXP Semiconductors
14. Contents
1
1.1
1.2
1.3
2
3
4
5
6
7
7.1
7.2
7.3
7.4
7.5
7.6
8
9
10
11
12
12.1
12.2
12.3
12.4
13
14
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Application information. . . . . . . . . . . . . . . . . . . 3
Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . 14
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ruggedness in class-AB operation. . . . . . . . . . 3
Single carrier N-CDMA performance . . . . . . . . 4
Two-tone . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Continuous wave . . . . . . . . . . . . . . . . . . . . . . . 6
Single carrier N-CDMA broadband per
formance at 7 W average . . . . . . . . . . . . . . . . . 7
Single carrier N-CDMA broadband
performance at 20 W average . . . . . . . . . . . . . 8
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
BLF6G27-45; BLF6G27S-45
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [e-mail]
WiMAX power LDMOS transistor
Document identifier: BLF6G27-45_BLF6G27S-45_3
Date of release: 15 December 2008
All rights reserved.