BLF1046 NXP Semiconductors, BLF1046 Datasheet - Page 8

• Manufacturer Part Number: BLF1046
• Description: RF MOSFET Power RF LDMOS 45W UHF
• Manufacturer: NXP Semiconductors

Specifications of BLF1046

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-467-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF1046,112

Philips Semiconductors
2000 Dec 20
handbook, full pagewidth
handbook, full pagewidth
UHF power LDMOS transistor
50
input
Dimensions in mm.
The components are situated on one side of the copper-clad printed-circuit board with Teflon dielectric (
The other side is unetched and serves as a ground plane.
C9
C16
C13
C10
L3
input
Fig.16 Component layout for 800 to 1000 MHz class-AB broadband test circuit.
C1
C2
C16
Fig.15 Class-AB broadband test circuit at f = 800 to 1000 MHz.
L1
R4
F1
R1
L4
R3
C3
C4
L5
R2
39 mm
C1
C13
C9
L1
R4
C2
F1
I DQ adjustment
R5
C10
C3
C4
R1
R3
C11
L6
R2
G
TR
8
R5
D
L7
C11
L2
C14
L2
C12
C5
C6
C14
C15
C6
C5
C15
+ 26 V ground
C7
L8
V DS (26 V)
r
= 2.2), thickness 0.79 mm.
C8
MLD467
C7
output
Product specification
L9
C8
BLF1046
MLD466
output
50