BLF1046 NXP Semiconductors, BLF1046 Datasheet - Page 4

• Manufacturer Part Number: BLF1046
• Description: RF MOSFET Power RF LDMOS 45W UHF
• Manufacturer: NXP Semiconductors

Specifications of BLF1046

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-467-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF1046,112

Philips Semiconductors
2000 Dec 20
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
V
tuned for high efficiency; see tuning procedure.
Fig.2
V
tuned for high linearity; see tuning procedure.
(1) I
(2) I
(3) I
Fig.4
DS
DS
(dB)
(dB)
G p
G p
= 26 V; I
= 26 V; T
20
15
10
20
15
10
DQ
DQ
DQ
5
0
5
0
0
0
= 240 mA.
= 300 mA.
= 400 mA.
Power gain and drain efficiency as functions
of load power; typical values.
Power gain and drain efficiency as functions
of peak envelope power; typical values.
DQ
h
(3)
(1)
= 330 mA; T
25 C; f
10
(2)
D
20
1
= 960 MHz; f
20
h
25 C; f = 960 MHz;
30
G p
2
= 960.1 MHz;
40
P L (PEP) (W)
P L (W)
40
PAE
MLD455
D
MLD457
60
50
80
60
40
20
0
80
60
40
20
0
(%)
(%)
D
D
4
handbook, halfpage
handbook, halfpage
V
tuned for high linearity; see tuning procedure
Fig.3
V
tuned for high linearity; see tuning procedure.
(1) I
(2) I
(3) I
Fig.5
DS
DS
(dB)
(dB)
G p
d 3
= 26 V; I
= 26 V; T
20
15
10
20
40
60
80
DQ
DQ
DQ
5
0
0
0
0
= 240 mA.
= 300 mA.
= 400 mA.
Power gain and drain efficiency as functions
of load power; typical values.
Third order intermodulation distortion as a
function of peak envelope load power;
typical values.
DQ
h
= 330 mA; T
25 C; f
10
20
(1)
(2)
(3)
1
= 960 MHz; f
20
h
G p
D
25 C; f = 960 MHz;
40
30
2
= 960.1 MHz;
Product specification
P L (PEP) (W)
60
40
P L (W)
BLF1046
MLD456
MLD458
80
50
80
60
40
20
0
(%)
D