BLF1046 NXP Semiconductors, BLF1046 Datasheet - Page 6

• Manufacturer Part Number: BLF1046
• Description: RF MOSFET Power RF LDMOS 45W UHF
• Manufacturer: NXP Semiconductors

Specifications of BLF1046

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-467-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF1046,112

Philips Semiconductors
2000 Dec 20
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
V
tuned for high linearity; see tuning procedure.
Measured EDGE channel bandwidth 270 kHz and adjacent
channels bandwidth 30 kHz.
Fig.10 EDGE 8PSK adjacent channel power as a
V
tuned for high linearity; see tuning procedure
Measured in broadband test circuit; see Figs. 15 and 16.
Fig.12 Intermodulation distortion as a function of
ACPR
(dBc)
DS
DS
(dBc)
d im
= 26 V; I
= 28 V; I
20
40
60
80
20
40
60
80
0
0
850
0
function of load power; typical values.
frequency; typical values.
DQ
DQ
= 300 mA; T
= 300 mA; P
4
900
d 3
d 5
d 7
h
8
L
200 KHz
250 KHz
400 KHz
= 45 W (PEP); T
25 C; f = 960 MHz;
12
950
h
f (MHz)
16
25 C;
P L (W)
MLD463
MLD465
1000
20
6
handbook, halfpage
V
tuned for high linearity; see tuning procedure
Measured in broadband test circuit; see Figs. 15 and 16.
Fig.11 Power gain and drain efficiency as functions
DS
(dB)
G p
= 28 V; I
20
15
10
5
0
850
of frequency; typical values.
DQ
= 300 mA; P
G p
D
900
L
= 45 W (PEP); T
950
Product specification
h
f (MHz)
25 C;
BLF1046
MLD464
1000
80
60
40
20
0
(%)
D