BLF1046 NXP Semiconductors, BLF1046 Datasheet - Page 3

• Manufacturer Part Number: BLF1046
• Description: RF MOSFET Power RF LDMOS 45W UHF
• Manufacturer: NXP Semiconductors

Specifications of BLF1046

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-467-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF1046,112

Philips Semiconductors
THERMAL CHARACTERISTICS
Note
1. Determined under specified RF operating conditions, based on maximum peak junction temperature.
CHARACTERISTICS
T
APPLICATION INFORMATION
RF performance in the common source class-AB broadband test circuit. T
unless otherwise specified.
Ruggedness in class-AB operation
The BLF1046 is capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the
following conditions: V
Tuning Procedure
For high gain and efficiency:
In CW mode (P
for high gain until G
For linear mode:
Tune for high gain and efficiency mode, then apply two tone signal (f
and tune first C2 and then C6 and C8 for lowest d
2000 Dec 20
R
V
V
I
I
I
g
R
C
C
C
CW, class-AB (2-tone)
CW, class-AB (1-tone)
j
DSS
DSX
GSS
MODE OF OPERATION
fs
SYMBOL
SYMBOL
(BR)DSS
GSth
th j-h
= 25 C unless otherwise specified.
DSon
is
os
rs
UHF power LDMOS transistor
thermal resistance from junction to
heatsink
drain-source breakdown voltage
gate-source threshold voltage
drain-source leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state resistance
input capacitance
output capacitance
feedback capacitance
D
= 1 W; f = 960 MHz) tune C2 and C16 (see Figs. 13 and 14) until IRL < 15 dB, then adjust C6 and C8
p
> 14 dB at P
DS
PARAMETER
PARAMETER
= 26 V; f = 960 MHz at rated load power.
f
1
= 960; f
L
= 50 W.
(MHz)
960
f
2
= 960.1
3
(below 28 dBc).
T
V
V
V
V
V
V
V
V
V
V
h
GS
DS
GS
GS
GS
DS
GS
GS
GS
GS
V
= 25 C; P
(V)
26
26
DS
= 0; I
= 10 V; I
= 0; V
= V
= 20 V; V
= 10 V; I
= V
= 0; V
= 0; V
= 0; V
3
GSth
GSth
CONDITIONS
CONDITIONS
D
DS
DS
DS
DS
= 0.7 mA
+ 9 V; V
+ 9 V; I
D
D
dis
= 26 V
= 26 V; f = 1 MHz
= 26 V; f = 1 MHz
= 26 V; f = 1 MHz
(mA)
300
300
I
= 70 mA
= 3.5 A
DS
DQ
= 97 W; note 1
1
= 0
= 960 MHz; f
D
DS
= 3.5 A
h
45 (PEP)
= 10 V
= 25 C; R
(W)
P
45
L
2
= 960.1 MHz) at P
65
4
12.5
th j-h
MIN.
(dB)
>14
>14
G
VALUE
= 1.87 K/W,
p
1.87
2
300
46
37
1.5
TYP.
Product specification
>35
>46
(%)
D
BLF1046
5
1
125
L
MAX.
= 45 W (PEP)
UNIT
K/W
(dBc)
V
V
A
nA
S
m
pF
pF
pF
d
UNIT
A
im
26