BLF1046 NXP Semiconductors, BLF1046 Datasheet - Page 7

RF MOSFET Power RF LDMOS 45W UHF

BLF1046

Manufacturer Part Number
BLF1046
Description
RF MOSFET Power RF LDMOS 45W UHF
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BLF1046

Minimum Operating Temperature
- 65 C
Mounting Style
SMD/SMT
Product Type
RF MOSFET Power
Resistance Drain-source Rds (on)
0.3 Ohms
Transistor Polarity
N-Channel
Configuration
Single
Drain-source Breakdown Voltage
65 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4.5 A
Maximum Operating Temperature
+ 200 C
Package / Case
SOT-467-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BLF1046,112

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Philips Semiconductors
2000 Dec 20
handbook, halfpage
UHF power LDMOS transistor
V
tuned for high linearity; see tuning procedure.
Fig.13 Optimal source impedance as a function of
DS
( )
= 26 V; I
Z i
4
2
0
2
4
840
frequency (series components);
typical values.
DQ
= 300 mA; P
880
L
x i
r i
= 45 W; T
h
920
25 C;
f (MHz)
MLD468
960
7
handbook, halfpage
V
tuned for high linearity; see tuning procedure.
Fig.14 Optimal load impedance as a function of
DS
( )
Z L
= 26 V; I
4
2
0
2
4
840
frequency (series components);
typical values.
DQ
= 300 mA; P
880
L
R L
X L
= 45 W; T
h
920
25 C;
Product specification
f (MHz)
BLF1046
MLD469
960

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