BLF1046 NXP Semiconductors, BLF1046 Datasheet - Page 5

• Manufacturer Part Number: BLF1046
• Description: RF MOSFET Power RF LDMOS 45W UHF
• Manufacturer: NXP Semiconductors

Specifications of BLF1046

• Minimum Operating Temperature: - 65 C
• Mounting Style: SMD/SMT
• Product Type: RF MOSFET Power
• Resistance Drain-source Rds (on): 0.3 Ohms
• Transistor Polarity: N-Channel
• Configuration: Single
• Drain-source Breakdown Voltage: 65 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 4.5 A
• Maximum Operating Temperature: + 200 C
• Package / Case: SOT-467-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BLF1046,112

Philips Semiconductors
2000 Dec 20
handbook, halfpage
handbook, halfpage
UHF power LDMOS transistor
V
tuned for high linearity; see tuning procedure.
(1) I
(2) I
(3) I
Fig.6
V
tuned for high linearity; see tuning procedure.
Fig.8
DS
DS
(dBc)
EVM
(%)
d 5
= 26 V; T
= 26 V; I
20
40
60
80
DQ
DQ
DQ
10
0
8
6
4
2
0
0
0
= 240 mA.
= 300 mA.
= 400 mA.
Fifth order intermodulation distortion as a
function of peak envelope load power;
typical values.
Error vector magnitude (EVM) / EDGE
8PSK as a functions of load power; typical
values.
DQ
h
= 300 mA; T
25 C; f
10
4
(1)
(3)
(2)
1
= 960 MHz; f
20
h
8
25 C; f = 960 MHz;
30
12
2
= 960.1 MHz;
P L (PEP) (W)
peak
rms
16
40
P L (W)
MLD459
MLD461
50
20
5
handbook, halfpage
handbook, halfpage
V
tuned for high linearity; see tuning procedure.
(1) I
(2) I
(3) I
Fig.7
V
tuned for high linearity; see tuning procedure.
Fig.9
DS
DS
EVM
(dBc)
(%)
(dB)
d 7
G p
= 26 V; T
= 26 V; I
20
40
60
80
20
15
10
DQ
DQ
DQ
0
5
0
0
0
= 240 mA.
= 300 mA.
= 400 mA.
Seventh order intermodulation distortion as
a function of peak envelope load power;
typical values.
EDGE 8PSK EVM, gain and efficiency as
functions of load power; typical values.
DQ
h
(1)
= 300 mA; T
25 C; f
10
4
G p
(3)
(2)
1
= 960 MHz; f
EVM
20
h
8
25 C; f = 960 MHz;
30
12
2
= 960.1 MHz;
Product specification
P L (PEP) (W)
40
16
BLF1046
P L (W)
MLD460
MLD462
50
20
40
30
20
10
0
(%)