ATTINY88-15MZ Atmel, ATTINY88-15MZ Datasheet - Page 19

• Manufacturer Part Number: ATTINY88-15MZ
• Description: IC MCU AVR 8B 8KB FLASH 32QFN
• Manufacturer: Atmel
• Series: AVR® ATtinyr

Specifications of ATTINY88-15MZ

• Core Processor: AVR
• Core Size: 8-Bit
• Speed: 16MHz
• Connectivity: I²C, SPI
• Peripherals: Brown-out Detect/Reset, POR, WDT
• Number Of I /o: 28
• Program Memory Size: 8KB (4K x 16)
• Program Memory Type: FLASH
• Eeprom Size: 64 x 8
• Ram Size: 512 x 8
• Voltage - Supply (vcc/vdd): 2.7 V ~ 5.5 V
• Data Converters: A/D 8x10b
• Oscillator Type: Internal
• Operating Temperature: -40°C ~ 125°C
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

5.3.2
5.3.3
5.3.4
5.3.5
9157B–AVR–01/10
Atomic Byte Programming
Split Byte Programming
Erase
Write
The simplest programming method is called Atomic Byte Programming. When writing a byte to
the EEPROM, the user must write the address into register EEAR and data into register EEDR.
If the EEPMn bits are zero, writing EEPE (within four cycles after EEMPE is written) will trigger
the erase/write operation. Both the erase and write cycle are done in one operation and the total
programming time is given in
and write operations are completed. While the device is busy with programming, it is not possi-
ble to do any other EEPROM operations.
It is possible to split the erase/write cycle in two different operations. This may be useful if the
system requires short access time for some limited period of time (typically if the power supply
voltage falls). In order to take advantage of this method, it is required that the locations to be
written have been erased before the write operation.
To erase a byte, the address must be written to EEAR. If the EEPMn bits are 0b01, writing the
EEPE (within four cycles after EEMPE is written) will trigger the erase operation only (program-
ming time is given in
completes. While the device is busy programming, it is not possible to do any other EEPROM
operations.
To write a location, the user must write the address into EEAR and the data into EEDR. If the
EEPMn bits are 0b10, writing the EEPE (within four cycles after EEMPE is written) will trigger
the write operation only (programming time is given in
remains set until the write operation completes. If the location to be written has not been erased
before write, the data that is stored must be considered as lost. While the device is busy with
programming, it is not possible to do any other EEPROM operations.
The calibrated oscillator is used to time the EEPROM accesses. Make sure the oscillator fre-
quency is within the requirements described in
page
The following code examples show one assembly and one C function for erase, write, or atomic
write of the EEPROM. The examples assume that interrupts are controlled (e.g., by disabling
interrupts globally) so that no interrupts will occur during execution of these functions.
32.
Figure 5-1 on page
Figure 5-1 on page
23). The EEPE bit remains set until the erase operation
“OSCCAL – Oscillator Calibration Register” on
23. The EEPE bit remains set until the erase
ATtiny88 Automotive
Figure 5-1 on page
23). The EEPE bit
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