IRFZ44E International Rectifier, IRFZ44E Datasheet - Page 4

• Manufacturer Part Number: IRFZ44E
• Description: MOSFET N-CH 60V 48A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ44E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 29A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1360pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFZ44E

IRFZ44E
1000
4
100
10
Fig 7. Typical Source-Drain Diode
Fig 7. Typical Source-Drain Diode
2500
2000
1500
1000
500
1
0.5
0
T = 175 C
J
1
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
V
C iss
C oss
C rss
Forward Voltage
Forward Voltage
SD
V
°
DS
1.0
,Source-to-Drain Voltage (V)
V
C
C
C
, Drain-to-Source Voltage (V)
T = 25 C
GS
iss
rss
oss
J
=
=
=
=
0V,
C
C
C
°
gs
gd
ds
1.5
+ C
+ C
10
f = 1MHz
gd ,
gd
C
ds
2.0
V
SHORTED
GS
= 0 V
2.5
100
1000
100
10
Fig 8. Maximum Safe Operating Area
1
20
16
12
1
8
4
0
T
T
Single Pulse
C
J
0
I =
D
= 25 C
= 175 C
OPERATION IN THIS AREA LIMITED
V
29
DS
°
10
Fig 6. Typical Gate Charge Vs.
Fig 6. Typical Gate Charge Vs.
°
Q , Total Gate Charge (nC)
, Drain-to-Source Voltage (V)
G
Gate-to-Source Voltage
Gate-to-Source Voltage
10
20
BY R
DS(on)
30
FOR TEST CIRCUIT
10us
100us
1ms
10ms
V
V
SEE FIGURE
DS
DS
100
40
= 48V
= 30V
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50
13
1000
60