IRFZ44E International Rectifier, IRFZ44E Datasheet - Page 2

• Manufacturer Part Number: IRFZ44E
• Description: MOSFET N-CH 60V 48A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFZ44E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 29A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 48A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1360pF @ 25V
• Power - Max: 110W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRFZ44E

Source-Drain Ratings and Characteristics
IRFZ44E
Electrical Characteristics @ T

‚
Notes:
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
L
L
C
C
C
I
I
V
t
Q
t
DSS
GSS
SM
d(on)
r
d(off)
f
S
rr
on
V
fs
D
S
2
(BR)DSS
DS(on)
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
Starting T
G
= 25 , I
/ T
J
J
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Internal Drain Inductance
Internal Source Inductance
= 25°C, L = 520µH
AS
= 29A. (See Figure 12)

Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
I
Pulse width
T
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
SD
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
2.0
Min. Typ. Max. Units
15
–––
60
–––
–––
–––
–––
–––
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
175°C
29A, di/dt
0.063 –––
1360 –––
–––
–––
–––
–––
–––
–––
–––
–––
420
–––
–––
–––
177
––– 0.023
––– -100
–––
160
4.5
12
60
70
70
7.5
69
–––
–––
–––
250
100
–––
–––
–––
–––
–––
–––
266
–––
104
4.0
300µs; duty cycle
1.3
13
25
60
23
192
48
320A/µs, V
V/°C
nC
nH
nC
µA
nA
ns
pF
ns
V
V
S
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
V
I
R
R
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
showing the
p-n junction diode.
T
di/dt = 100A/µs
MOSFET symbol
T
integral reverse
D
D
DD
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 29A
= 29A
= 25°C, I
= 25°C, I
= 1.1 , See Fig. 10 „
= 15
= 0V, I
= 10V, I
= V
= 30V, I
= 60V, V
= 48V, V
= 20V
= -20V
= 48V
= 10V, See Fig. 6 and 13
= 30V
= 0V
= 25V
V
2%.
(BR)DSS
GS
, I
D
S
F
D
D
D
Conditions
= 250µA
GS
GS
Conditions
= 29A
= 29A, V
,
= 29A
= 250µA
= 29A…
„
= 0V
= 0V, T
D
GS
= 1mA
„
J
www.irf.com
= 150°C
= 0V
G
G
S
„
+L
„
D
D
S
S
)
D