IRF5805 International Rectifier, IRF5805 Datasheet
IRF5805
Specifications of IRF5805
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IRF5805 Summary of contents
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... Junction and Storage Temperature Range J STG Thermal Resistance Parameter R Maximum Junction-to-Ambient JA www.irf.com HEXFET V DSS -30V Top View DS(on) DS(on) @ -10V GS @ -10V GS ƒ ƒ ƒ PD -94029A IRF5805 ® Power MOSFET R max I DS(on) D 0.098@V = -10V 3. 0.165@V = -4.5V 3. TSOP-6 Max. Units -30 V -3.8 -3 ...
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Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source Forward ...
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PULSE WIDTH Tj = 25°C 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 10 ° 150 ° ...
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0V MHZ C iss = SHORTED C rss = oss = 600 Ciss 400 200 Coss Crss ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 ...
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-3.8A 0.150 0.100 0.050 2.0 3.0 4.0 5.0 6.0 7.0 -V GS, Gate -to -Source Voltage (V) Fig 12. Typical On-Resistance Vs. Gate Voltage ...
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Temperature ( °C ) Fig 15. Typical Vgs(th) Vs. Junction Temperature www.irf.com -250µ 0.001 75 ...
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8 www.irf.com ...
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... PART NUMBER PART NUMBER CODE REFERENCE SI3443DV B = IRF5800 C = IRF5850 D = IRF5851 E = IRF5852 I = IRF5805 J = IRF5806 K = IRF5810 L = IRF5804 M = IRF5803 N = IRF5820 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR JAPAN: K& ...