IRF5805 International Rectifier, IRF5805 Datasheet - Page 6

• Manufacturer Part Number: IRF5805
• Description: MOSFET P-CH 30V 3.8A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5805

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 98 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 511pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

6
0.500
0.450
0.400
0.350
0.300
0.250
0.200
0.150
0.100
0.050
Fig 14a. Basic Gate Charge Waveform
Fig 12. Typical On-Resistance Vs.
V
G
2.0
Q
GS
3.0
-V GS, Gate -to -Source Voltage (V)
Gate Voltage
4.0
Charge
Q
Q
5.0
GD
G
6.0
I D = -3.8A
7.0
8.0
9.0
10.0
0.400
0.300
0.200
0.100
0.000
Fig 14b. Gate Charge Test Circuit
Fig 13. Typical On-Resistance Vs.
12V
0
V
GS
VGS = -4.5V
Same Type as D.U.T.
Current Regulator
.2 F
Drain Current
5
-I D , Drain Current ( A )
50K
-3mA
Current Sampling Resistors
.3 F
I
G
10
VGS = -10V
D.U.T.
I
D
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+
-
V
DS
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