IRF5805 International Rectifier, IRF5805 Datasheet - Page 3

• Manufacturer Part Number: IRF5805
• Description: MOSFET P-CH 30V 3.8A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5805

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 98 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 511pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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100
0.1
0.01
10
100
Fig 3. Typical Transfer Characteristics
0.1
Fig 1. Typical Output Characteristics
1
10
1
2.0
0.1
T = 150 C
J
-V
GS
-V DS , Drain-to-Source Voltage (V)
°
3.0
, Gate-to-Source Voltage (V)
1
T = 25 C
J
-2.5V
4.0
20µs PULSE WIDTH
Tj = 25°C
°
V
20µs PULSE WIDTH
DS
10
= -15V
5.0
TOP
BOTTOM -2.5V
VGS
-10.0V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
6.0
100
0.01
2.0
1.5
1.0
0.5
0.0
Fig 2. Typical Output Characteristics
100
0.1
10
1
-60 -40 -20
Fig 4. Normalized On-Resistance
0.1
I =
D
-3.8A
T , Junction Temperature ( C)
-V DS , Drain-to-Source Voltage (V)
J
Vs. Temperature
0
20 40 60 80 100 120 140 160
1
20µs PULSE WIDTH
Tj = 150°C
-2.5V
10
TOP
BOTTOM -2.5V
V
GS
°
=
VGS
-10.0V
-10V
-4.5V
-3.7V
-3.5V
-3.3V
-3.0V
-2.7V
3
100