IRF5805 International Rectifier, IRF5805 Datasheet - Page 5

• Manufacturer Part Number: IRF5805
• Description: MOSFET P-CH 30V 3.8A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5805

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 98 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 511pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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4.0
3.0
2.0
1.0
0.0
100
0.1
10
0.00001
25
Fig 9. Maximum Drain Current Vs.
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
75
SINGLE PULSE
100
125
°
0.001
t , Rectangular Pulse Duration (sec)
1
150
0.01
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
GS
DS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
0.1
t
r
J
DM
x Z
1
thJA
P
2
DM
1
t
d(off)
+ T
A
t
1
t
f
t
2
+
-
5
10