IRF5805 International Rectifier, IRF5805 Datasheet - Page 4

• Manufacturer Part Number: IRF5805
• Description: MOSFET P-CH 30V 3.8A 6-TSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF5805

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 98 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 3.8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 511pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: Micro6™(TSOP-6)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

4
100
0.1
800
600
400
200
10
1
0
0.0
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
T = 150 C
J
Drain-to-Source Voltage
-V
0.5
SD
Ciss
Coss
Crss
V DS , Drain-to-Source Voltage (V)
°
Forward Voltage
,Source-to-Drain Voltage (V)
1.0
T = 25 C
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
J
1.5
°
10
f = 1 MHZ
2.0
V
GS
2.5
= 0 V
3.0
100
100
0.1
10
16
12
Fig 8. Maximum Safe Operating Area
1
8
4
0
0.1
0
T
T
Single Pulse
Fig 6. Typical Gate Charge Vs.
I =
D
C
J
= 25 C °
= 150 C
OPERATION IN THIS AREA LIMITED
-V
-3.8A
Gate-to-Source Voltage
2
DS
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
4
1
BY R
6
DS(on)
8
V
V
DS
DS
www.irf.com
10
=-24V
=-15V
10
10us
100us
1ms
10ms
12
100
14