FQD1N60 Fairchild Semiconductor, FQD1N60 Datasheet
FQD1N60
Manufacturer Part Number
FQD1N60
Description
600V N-Channel MOSFET
Manufacturer
Fairchild Semiconductor
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©2000 Fairchild Semiconductor International
FQD1N60 / FQU1N60
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for high efficiency switch mode power supply.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
DSS
GSS
AS
AR
D
Symbol
Symbol
, T
JC
JA
JA
STG
G
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
S
FQD Series
D-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
= 25°C) *
Parameter
Parameter
= 25°C)
G
T
D
C
C
C
= 25°C unless otherwise noted
S
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 1.0A, 600V, R
• Low gate charge ( typical 5.0 nC)
• Low Crss ( typical 3.0 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
FQU Series
I-PAK
FQD1N60 / FQU1N60
DS(on)
Typ
--
--
--
-55 to +150
= 11.5
0.63
0.24
600
300
1.0
4.0
1.0
3.0
4.5
2.5
50
30
30
G
@V
!
!
Max
4.17
110
50
GS
QFET
QFET
QFET
QFET
! "
! "
= 10 V
!
!
!
!
S
D
"
"
"
"
"
"
April 2000
Units
W/°C
Units
°CW
°CW
°CW
V/ns
mJ
mJ
Rev. A, April 2000
°C
°C
W
W
V
A
A
A
V
A
TM
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