STEVAL-ISF001V1 STMicroelectronics, STEVAL-ISF001V1 Datasheet - Page 9

BOARD EVAL FOR L6563/STW55NM60N

STEVAL-ISF001V1

Manufacturer Part Number
STEVAL-ISF001V1
Description
BOARD EVAL FOR L6563/STW55NM60N
Manufacturer
STMicroelectronics
Type
MOSFET & Power Driverr

Specifications of STEVAL-ISF001V1

Main Purpose
Power Management, Power Factor Correction
Embedded
No
Utilized Ic / Part
L6563
Primary Attributes
3 kW, 400 V Out, FOT(Fixed Off Time Control), 240 VAC (185 ~ 265 Vrms)
Secondary Attributes
Iout Max 7.5 A
Product
Power Management Modules
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
For Use With/related Products
STW55NM60N
Other names
497-8850
L6563 - L6563A
Table 5. Electrical characteristics (continued)
( -25°C < T
and GND; unless otherwise specified)
Zero current detector
Tracking boost function
PFC_OK
PWM_LATCH
PWM_STOP
V
Symbol
I
I
TBOclamp
I
V
PFC_OK
V
V
V
V
V
ZCDsnk
ZCDsrc
I
I
ZCDb
V
I
ZCDH
ZCDA
ZCDT
V
clamp
clamp
ZCDL
TBO
I
∆V
V
V
leak
V
leak
EN
thl
th
H
L
J
Upper clamp voltage
Lower clamp voltage
Arming voltage
(positive-going edge)
Triggering voltage
(negative-going edge)
Input bias current
Source current capability
Sink current capability
Dropout voltage
V
Linear operation
I
mismatch
Clamp voltage
Latch-off threshold
Disable threshold
Enable threshold
Input bias current
Clamp voltage
Low level leakage
current
High level
High level leakage
current
Low level
Clamp voltage
< +125°C, V
INV
VFF
- I
- V
TBO
Parameter
TBO
current
CC
= 12V, C
I
I
(4)
(4)
V
I
I
V
Voltage rising
Voltage falling
Voltage rising
V
I
V
I
V
I
I
o
ZCD
ZCD
TBO
TBO
PFC_OK
PWM_LATCH
PWM_STOP
PFC_OK
ZCD
VFF
PFC_OK
PWM_LATCH
PWM_STOP
= 1nF between pin GD and GND, C
= 2.5 mA
= - 2.5 mA
= 0.25 mA
= 25 µA to 0.25 mA
= 4V
= 1 to 4.5 V
= 1 mA
= 2 mA
= 0 to 2.5V
(2)
= 0.5 mA
Test condition
= -0.5 mA
= 6V
=0
(2)
(2)
(2)
FF
Min
-0.3
-2.5
-3.5
5.0
2.5
2.9
2.4
3.7
0
9
9
=1µF between pin V
Electrical characteristics
0.26
Typ
-0.1
5.7
1.4
0.7
2.5
0.2
9.5
9.5
0
3
Max
0.25
0.3
3.5
3.1
2.6
20
-1
-1
1
1
1
FF
Unit
mA
mA
mV
mA
µA
µA
µA
µA
%
V
V
V
V
V
V
V
V
V
V
V
V
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