GL100MN0MP Sharp Microelectronics, GL100MN0MP Datasheet - Page 3

EMITTER IR 940NM GP 3.0MW SMD

GL100MN0MP

Manufacturer Part Number
GL100MN0MP
Description
EMITTER IR 940NM GP 3.0MW SMD
Manufacturer
Sharp Microelectronics
Datasheet

Specifications of GL100MN0MP

Current - Dc Forward (if)
50mA
Wavelength
940nm
Voltage - Forward (vf) Typ
1.2V
Viewing Angle
20°
Orientation
Universal
Mounting Type
Surface Mount
Package / Case
Non-Standard SMD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Radiant Intensity (ie) Min @ If
-
Other names
425-1022-2
■ Absolute Maximum Ratings
*
*
■ Electro-optical Charactertistics
Fig. 1 Forward Current vs.
Forward current
Peak pulsed forward current *1
Reverse voltage
Power dissipation
Operating temperature
Storage temperature
Soldering temperature *2
Forward voltage
Peak forward voltage
Reverse current
Radiant intensity
Peak emission wavelength
Half intensity wavelength
Terminal capacitance
Response frequency
Half-intensity angle
1 Pulse width: 100 µs, Duty ratio: 0.01
2 Within 10 s (MAX.) see Fig. 10.
60
50
40
30
20
10
0
-50
Parameter
Ambient Temperature
Parameter
-30
-25
Ambient temperature T
0
25
Symbol
V
V
λp
Δλ
Δθ
C
I
φ
f
Symbol
FM
R
C
50
e
F
t
a
Topr
Tstg
Tsol
I
V
(°C)
I
FM
P
F
R
75
85
-30 to +85
-40 to+ 95
Rating
100
240
0.5
50
75
V
6
R
Conditions
I
I
I
= 0, f = 1 MHz
FM
(Ta = 25°C)
F
F
I
I
V
F
F
= 20 mA
= 20 mA
R
= 5 mA
= 5 mA
= 0.5 A
= 3 V
Unit
mW
mA
°C
°C
°C
A
V
3
Fig. 2 Peak Forward Current vs. Duty Ratio
10000
1000
100
10
10
-4
MIN.
1.0
10
-3
TYP.
±10
940
300
1.2
3.0
45
50
Duty ratio
10
-2
MAX.
1.4
4.0
3.0
10
Pulse width
GL100MN0MPx
Sheet No.: D1-A00601EN
Ta = 25°C
10
(Ta = 25°C)
-1
degrees
Unit
mW
kHz
nm
nm
µA
pF
V
V
100 µs
10
0

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