QEC121 Fairchild Optoelectronics Group, QEC121 Datasheet

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QEC121

Manufacturer Part Number
QEC121
Description
LED IR EMITTING ALGAAS 880NM 3MM
Manufacturer
Fairchild Optoelectronics Group
Series
QEC12xr
Datasheet

Specifications of QEC121

Current - Dc Forward (if)
50mA
Radiant Intensity (ie) Min @ If
14mW/sr @ 100mA
Wavelength
880nm
Voltage - Forward (vf) Typ
1.7V
Viewing Angle
16°
Orientation
Top View
Mounting Type
Through Hole
Package / Case
T-1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
QEC121
Manufacturer:
KINGBRIGHT
Quantity:
30
Part Number:
QEC121
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Part Number:
QEC121/QEC122/QEC123
Quantity:
1 000
©2001 Fairchild Semiconductor Corporation
QEC121, QEC122, QEC123 Rev. 1.0.1
QEC121, QEC122, QEC123
Plastic Infrared Light Emitting Diode
Features
Package Dimensions
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.10 (0.25) on all non-nominal dimensions
Chip material = AlGaAs
Package type: T-1 (3mm)
Matched photosensor: QSC112/QSC113/QSC114
Narrow emission angle, 8° at 80% intensity
High output power
Package material and color: clear, purple tinted, plastic
= 880nm
unless otherwise specified.
0.032 (0.082)
0.050 (1.27)
REFERENCE
0.052 (1.32)
SURFACE
0.800 (20.3)
PACKAGE DIMENSIONS
0.116 (2.95)
0.018 (0.46)
MIN
SQ. (2x)
0.100 (2.54)
0.193 (4.90)
CATHODE
0.155 (3.94)
NOM
0.030 (0.76)
NOM
Description
The QEC121, QEC122 and QEC123 are 880nm AlGaAs
LED encapsulated in a clear purple tinted, plastic T-1
package.
Schematic
CATHODE
ANODE
www.fairchildsemi.com
August 2008

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QEC121 Summary of contents

Page 1

... Tolerance is ±0.10 (0.25) on all non-nominal dimensions unless otherwise specified. ©2001 Fairchild Semiconductor Corporation QEC121, QEC122, QEC123 Rev. 1.0.1 Description The QEC121, QEC122 and QEC123 are 880nm AlGaAs LED encapsulated in a clear purple tinted, plastic T-1 package. 0.193 (4.90) 0.030 (0.76) NOM CATHODE 0 ...

Page 2

... Radiant Intensity QEC122 E I Radiant Intensity QEC123 E TC Temperature Coefficient IE t Rise Time r t Fall Time f C Junction Capacitance j ©2001 Fairchild Semiconductor Corporation QEC121, QEC122, QEC123 Rev. 1.0 25°C unless otherwise specified) A Parameter (2)(3)(4) (2)(3) ( 25°C) A Test Conditions Min 100mA 100mA ...

Page 3

... PW Duty Cycle = 4% 4 3.0 2.0 1.0 0.0 10 100 I – FORWARD CURRENT (mA) F ©2001 Fairchild Semiconductor Corporation QEC121, QEC122, QEC123 Rev. 1.0.1 Figure 2. Peak Wavelength vs. Ambient Temperature 910 908 906 904 902 900 898 896 894 900 950 1,000 1,050 0 Figure 4. Normalized Radient Intensity vs. Ambient Temperature 1 ...

Page 4

... Typical Performance Curves Figure 7. Radiation Diagram 90 100 110 120 130 140 150 160 170 180 1.0 0.8 0.6 0.4 0.2 0.0 ©2001 Fairchild Semiconductor Corporation QEC121, QEC122, QEC123 Rev. 1.0.1 (Continued) Figure 8. Coupling Characteristics of QEC12X and QSC11X 0.4 10 0.2 0 0.2 0.4 ...

Page 5

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Ful l Production Obsolete Not In Production ©2001 Fairchild Semiconductor Corporation QEC121, QEC122, QEC123 Rev. 1.0.1 ® PowerTrench ® Programmable Active Droop™ SM ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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