QEE123 Fairchild Optoelectronics Group, QEE123 Datasheet

LED IR EMITTING 880NM SIDELOOKER

QEE123

Manufacturer Part Number
QEE123
Description
LED IR EMITTING 880NM SIDELOOKER
Manufacturer
Fairchild Optoelectronics Group
Series
QEE12xr
Datasheet

Specifications of QEE123

Current - Dc Forward (if)
50mA
Radiant Intensity (ie) Min @ If
8mW/sr @ 100ma
Wavelength
880nm
Voltage - Forward (vf) Typ
1.7V
Viewing Angle
50°
Orientation
Side View
Mounting Type
Through Hole
Package / Case
Radial
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
QEE123QT
QEE123QT

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Part Number
Manufacturer
Quantity
Price
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©2004 Fairchild Semiconductor Corporation
QEE122, QEE123 Rev. 1.0.0
QEE122, QEE123
Plastic Infrared Light Emitting Diode
Features
Package Dimensions
Notes:
1. Dimensions of all drawings are in inches (mm).
2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions
Package Type = Sidelooker
Chip Material = AlGaAs
Matched Photosensor: QSE113
Medium Wide Emission Angle, 50°
Package Material: Clear Epoxy
High Output Power
Orange stripe on the top side
= 880 nm
unless otherwise specified.
0.050 (1.27)
0.030 (0.76)
Ø0.095 (2.41)
0.087 (2.22)
PACKAGE DIMENSIONS
CATHODE
0.100 (2.54)
NOM
0.020 (0.51) SQ.
0.100 (2.54)
(2X)
ANODE
0.175 (4.44)
0.500 (12.70)
0.200 (5.08)
Ø0.065 (1.65)
MIN
Description
The QEE12X is a 880 nm AlGaAs LED encapsulated in
a medium wide angle, plastic sidelooker package.
Schematic
CATHODE
ANODE
September 2008
www.fairchildsemi.com

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QEE123 Summary of contents

Page 1

... Notes: 1. Dimensions of all drawings are in inches (mm). 2. Tolerance is ±0.010 (0.25) on all non-nominal dimensions unless otherwise specified. ©2004 Fairchild Semiconductor Corporation QEE122, QEE123 Rev. 1.0.0 Description The QEE12X is a 880 nm AlGaAs LED encapsulated in a medium wide angle, plastic sidelooker package. 0.175 (4.44) Ø ...

Page 2

... R I Radiant Intensity QEE122 E Radiant Intensity QEE123 TC Temperature Coefficient IE t Rise Time r t Fall Time f C Junction Capacitance j ©2004 Fairchild Semiconductor Corporation QEE122, QEE123 Rev. 1.0 25°C unless otherwise specified) A Parameter (2)(3)(4) (2)(3) ( 25°C) A Test Conditions Min 20mA 100mA ...

Page 3

... PW Duty Cycle = 4% 4 3.0 2.0 1.0 0.0 10 100 I – FORWARD CURRENT (mA) F ©2004 Fairchild Semiconductor Corporation QEE122, QEE123 Rev. 1.0.0 Figure 2. Peak Wavelength vs. Ambient Temperature 910 908 906 904 902 900 898 896 894 900 950 1,000 1,050 0 Figure 4. Normalized Radient Intensity vs. Ambient Temperature 1 ...

Page 4

... Figure 7. Radiation Diagram 90 100 110 120 130 140 150 160 170 180 1.0 0.8 0.6 0.4 0.2 0.0 ©2004 Fairchild Semiconductor Corporation QEE122, QEE123 Rev. 1.0.0 (Continued) Figure 8. Coupling Characteristics of QEE123 and QSE113 0.4 10 0.2 0 0.2 0.4 0.6 0.8 1.0 ...

Page 5

... Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Ful l Production Obsolete Not In Production ©2004 Fairchild Semiconductor Corporation QEE122, QEE123 Rev. 1.0.0 ® PowerTrench ® Programmable Active Droop™ SM ® QFET QS™ Quiet Series™ RapidConfigure™ ™ ...

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