MT9VDVF6472Y-335D4 Micron Technology Inc, MT9VDVF6472Y-335D4 Datasheet - Page 36

• Manufacturer Part Number: MT9VDVF6472Y-335D4
• Description: MODULE DDR 512MB 184-DIMM VLP
• Manufacturer: Micron Technology Inc

Specifications of MT9VDVF6472Y-335D4

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184RDIMM
• Device Core Size: 72b
• Organization: 64Mx72
• Total Density: 512MByte
• Chip Density: 512Mb
• Access Time (max): 700ps
• Package Type: VLP DIMM
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.575A
• Number Of Elements: 9
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 22:
PDF: 09005aef81cf6969/Source: 09005aef81cf67b0
DVF9C32_64x72_2.fm - Rev. A 8/05 EN
Byte
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
0
1
2
3
4
5
6
7
8
9
Number of SPD Bytes Used by Micron
Total Number of Bytes in SPD Device
Fundamental Memory Type
Number of Row Addresses on Assembly
Number of Column Addresses on Assembly
Number of Physical Ranks on DIMM
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time,
(See note 1)
SDRAM Access From Clock,
(CAS Latency = 2.5)
Module Configuration Type
Refresh Rate/Type
SDRAM Device Width (Primary SDRAM)
Error-checking SDRAM Data Width
Minimum Clock Delay, Back-to-Back
Random Column Access
Burst Lengths Supported
Number of Banks on SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time,
SDRAM Access from CK,
CAS Latency = 2
SDRAM Cycle Time,
SDRAM Access from CK,
CAS Latency = 1.5
Minimum Row Precharge Time,
Minimum Row Active to Row Active,
Minimum RAS# to CAS# Delay,
Serial Presence-Detect Matrix
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”
Description
t
t
t
CK (CAS Latency = 2.5)
CK, CAS Latency = 2
CK, CAS Latency = 1.5
t
t
AC,
AC,
t
AC
t
RCD
t
RP
t
RRD
256MB, 512MB: (x72, SR) 184-Pin DDR VLP RDIMM
Registered, PLL/Diff. Clock
15ns (-262/-26A/-265/-202)
0.75ns (-262/-26A/-265)
0.75ns (-262/-26A/-265)
7.5ns (-335/-262/-26A)
20ns (-202/-265/-26A)
20ns (-202/-265/-26A)
Fast/Concurrent AP
Entry (Version)
10ns (-265/-202)
36
7ns (-262/-26A)
SDRAM DDR
0.70ns (-335)
7.5ns (-265)
0.8ns (-202)
0.8ns (-202)
7.81µs/SELF
18ns (-335)
15ns (-262)
18ns (-335)
15ns (-262)
12ns (-335)
8ns (-202)
SSTL 2.5V
6ns(-335)
0.7(-335)
10 or 11
1 clock
2, 4, 8
2, 2.5
ECC
128
256
N/A
N/A
13
72
1
0
8
8
4
0
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
MT9VDVF3272
0D
0A
A0
3C
3C
3C
80
08
07
01
48
00
04
60
70
75
80
70
75
80
02
82
08
08
01
0E
04
0C
01
02
26
C0
75
70
75
80
00
00
48
50
30
48
50
Serial Presence-Detect
©2004 Micron Technology, Inc. All rights reserved.
MT9VDVF6472
0D
A0
80
08
07
0B
01
48
00
04
60
70
75
80
70
75
80
02
82
08
08
01
0E
04
0C
01
02
26
C0
75
70
75
80
00
00
48
3C
50
30
3C
48
3C
50