MT18VDDT12872AG-335F1 Micron Technology Inc, MT18VDDT12872AG-335F1 Datasheet - Page 9

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MT18VDDT12872AG-335F1

Manufacturer Part Number
MT18VDDT12872AG-335F1
Description
MODULE DDR 1GB 184-DIMM
Manufacturer
Micron Technology Inc

Specifications of MT18VDDT12872AG-335F1

Memory Type
DDR SDRAM
Memory Size
1GB
Speed
333MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184UDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
512Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.62A
Number Of Elements
18
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Table 6:
NOTE:
Table 7:
pdf: 09005aef80814e61, source: 09005aef80a43eed
DDA18C32_64_128x72AG.fm - Rev. E 9/04 EN
1. For a burst length of two, A1-Ai select the two-data-ele-
2. For a burst length of four, A2-Ai select the four-data-
3. For a burst length of eight, A3-Ai select the eight-data-
4. Whenever a boundary of the block is reached within a
5. i = 9 (256MB, 512MB);
LENGTH
BURST
ment block; A0 selects the first access within the block.
element block; A0-A1 select the first access within the
block.
element block; A0-A2 select the first access within the
block.
given sequence above, the following access wraps
within the block.
i = 9, 11 (1GB)
2
4
8
SPEED
-40B
A2
0
0
0
0
1
1
1
1
STARTING
ADDRESS
COLUMN
Burst Definition Table
CAS Latency (CL) Table
A1 A0
A1 A0
75
0
0
1
1
0
0
1
1
0
0
1
1
CL = 2
f
A0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
ALLOWABLE OPERATING
133
ORDER OF ACCESSES WITHIN
FREQUENCY (MHZ)
0-1-2-3-4-5-6-7 0-1-2-3-4-5-6-7
1-2-3-4-5-6-7-0 1-0-3-2-5-4-7-6
2-3-4-5-6-7-0-1 2-3-0-1-6-7-4-5
3-4-5-6-7-0-1-2 3-2-1-0-7-6-5-4
4-5-6-7-0-1-2-3 4-5-6-7-0-1-2-3
5-6-7-0-1-2-3-4 5-4-7-6-1-0-3-2
6-7-0-1-2-3-4-5 6-7-4-5-2-3-0-1
7-0-1-2-3-4-5-6 7-6-5-4-3-2-1-0
SEQUENTIAL
TYPE =
0-1-2-3
1-2-3-0
2-3-0-1
3-0-1-2
75
0-1
1-0
CL = 2.5
f
A BURST
167 125
INTERLEAVED
256MB, 512MB, 1GB (x72, ECC, DR), PC3200
TYPE =
0-1-2-3
1-0-3-2
2-3-0-1
3-2-1-0
CL = 3
0-1
1-0
f
200
9
Operating Mode
MODE REGISTER SET command with bits A7–A11 (for
256MB), or A7–A12 (512MB, 1GB) each set to zero, and
bits A0–A6 set to the desired values. A DLL reset is ini-
tiated by issuing a MODE REGISTER SET command
with bits A7 and A9–A11 (256MB), or A7 and A9–A12
(512MB, 1GB) each set to zero, bit A8 set to one, and
bits A0–A6 set to the desired values. Although not
required by the Micron device, JEDEC specifications
recommend when a LOAD MODE REGISTER com-
mand is issued to reset the DLL, it should always be
followed by a LOAD MODE REGISTER command to
select normal operating mode.
(256MB), or A7–A12 (512MB, 1GB) are reserved for
future use and/or test modes.
COMMAND
COMMAND
COMMAND
The normal operating mode is selected by issuing a
All other combinations of values for A7–A11
DQS
DQS
DQS
CK#
CK#
CK#
DQ
DQ
DQ
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Figure 5: CAS Latency Diagram
CK
CK
CK
184-PIN DDR SDRAM UDIMM
READ
READ
READ
Burst Length = 4 in the cases shown
Shown with nominal t AC, t DQSCK, and t DQSQ
T0
T0
T0
CL = 2
TRANSITIONING DATA
CL = 2.5
NOP
NOP
NOP
T1
T1
T1
CL = 3
T2
NOP
NOP
NOP
T2
T2
Test modes and
©2004 Micron Technology, Inc.
T2n
T2n
T2n
DON’T CARE
T3
NOP
NOP
NOP
T3
T3
T3n
T3n
T3n

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