MT18VDDT12872AG-335F1 Micron Technology Inc, MT18VDDT12872AG-335F1 Datasheet - Page 12

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MT18VDDT12872AG-335F1

Manufacturer Part Number
MT18VDDT12872AG-335F1
Description
MODULE DDR 1GB 184-DIMM
Manufacturer
Micron Technology Inc

Specifications of MT18VDDT12872AG-335F1

Memory Type
DDR SDRAM
Memory Size
1GB
Speed
333MT/s
Package / Case
184-DIMM
Main Category
DRAM Module
Sub-category
DDR SDRAM
Module Type
184UDIMM
Device Core Size
72b
Organization
128Mx72
Total Density
1GByte
Chip Density
512Mb
Maximum Clock Rate
333MHz
Operating Supply Voltage (typ)
2.5V
Operating Current
1.62A
Number Of Elements
18
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
184
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14; notes appear on pages 19–21; 0°C
Table 11: AC Input Operating Conditions
Notes: 1–5, 14, 48; notes appear pages 19–21; 0°C
pdf: 09005aef80814e61, source: 09005aef80a43eed
DDA18C32_64_128x72AG.fm - Rev. E 9/04 EN
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT
Any input 0V VIN V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQ are disabled; 0V
OUTPUT LEVELS
High Current (V
Low Current (V
PARAMETER/CONDITION
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on V
Voltage on V
Relative to VSS . . . . . . . . . . . . . . . . . . . . -1V to +3.6V
Relative to V
Relative to V
OUT
REF
OUT
DD
DD
SS
SS
Q Supply
= 0.373V, maximum V
Supply
and Inputs
= V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
DD
V
DD
OUT
, V
Q-0.373V, minimum V
REF
V
pin 0V V
DD
Q)
IN
REF
, maximum V
1.35V
256MB, 512MB, 1GB (x72, ECC, DR), PC3200
REF
SYMBOL
V
, minimum V
V
V
T
T
REF
Command/
Address, RAS#,
CAS#, WE#
CKE, S#
CK, CK#
DM
DQ, DQS
IH
IL
A
A
(
(
AC
(
AC
AC
+70°C
+70°C; V
)
)
TT
)
)
12
TT
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
DD
)
V
0.49 V
Voltage on I/O Pins
Operating Temperature
Storage Temperature (plastic) . . . . . . -55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . 50mA
= V
REF
SYMBOL
V
V
Relative to V
T
V
MIN
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
V
IH
184-PIN DDR SDRAM UDIMM
IL
DD
V
+ 0.310
A
I
DD
I
I
OH
OZ
OL
REF
DD
I
(
TT
(
I
(ambient) . . . . . . . . . . . . . . . . . . . . .. 0°C to +70°C
DC
DC
Q = +2.6V ±0.1V
Q
DD
)
)
Q
V
V
REF
REF
0.49
V
-16.8
MIN
16.8
0.51
-0.3
V
2.5
2.5
-36
-18
-12
-10
DD
SS
-4
+ 0.15
REF
- 0.04 V
Q
MAX
. . . . . . . . . . . . -0.5V to V
- 0.310
V
DD
V
V
Q
REF
REF
DD
0.51
MAX
V
2.7
2.7
DD
36
18
12
10
+ 0.04
4
- 0.15
+ 0.3
Q
UNITS
V
V
V
UNITS
mA
mA
µA
µA
©2004 Micron Technology, Inc.
V
V
V
V
V
V
12, 25, 35
12, 25, 35
NOTES
DD
32, 36, 39,
32, 36, 47
NOTES
6
33, 34
Q +0.5V
6, 39
7, 39
47
25
25
46
46

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