MT18VDVF12872DG-40BD4 Micron Technology Inc, MT18VDVF12872DG-40BD4 Datasheet

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MT18VDVF12872DG-40BD4

Manufacturer Part Number
MT18VDVF12872DG-40BD4
Description
MODULE DDR 1GB 184-DIMM VLP
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT18VDVF12872DG-40BD4

Memory Type
DDR SDRAM
Memory Size
1GB
Speed
400MT/s
Package / Case
184-DIMM
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
DDR SDRAM VLP Registered DIMM
MT18VDVF6472D – 512MB
MT18VDVF12872D – 1GB
For the latest data sheet, refer to Micron’s Web site:
Features
• 184-pin, very low profile dual in-line memory
• Fast data transfer rates: PC2100 or PC2700
• Utilizes 266 MT/s and 333 MT/s DDR SDRAM
• Registered inputs with one-clock delay
• Phase-lock loop (PLL) clock driver to reduce loading
• Supports ECC error detection and correction
• 512MB (64 Meg x 72) and 1GB (128 Meg x 72)
• V
• V
• 2.5V I/O (SSTL_2 compatible)
• Commands entered on each positive CK edge
• DQS edge-aligned with data for READs; center-
• Internal, pipelined double data rate (DDR)
• Bidirectional data strobe (DQS) transmitted/
• Differential clock inputs CK and CK#
• Four internal device banks for concurrent operation
• Programmable burst lengths: 2, 4, or 8
• Auto precharge option
• Auto refresh and self refresh modes
• 7.8125µs maximum average periodic refresh
• Serial presence detect (SPD) with EEPROM
• Programmable READ CAS latency
• Gold edge contacts
• Dual rank
PDF: 09005aef81c73825/Source: 09005aef81c73837
DVF18C64_128x72D_1.fm - Rev. A 8/05 EN
module (VLP DIMM)
components
aligned with data for WRITEs
architecture; two data accesses per clock cycle
received with data—i.e., source-synchronous data
capture
interval
DD
DDSPD
= V
DDQ
= +2.3V to +3.6V
Products and specifications discussed herein are subject to change by Micron without notice.
= +2.5V
www.micron.com/products/modules
512MB, 1GB: (x72, DR) 184-Pin DDR VLP RDIMM
1
Figure 1:
Notes:1. Contact Micron for product availability.
Options
• Package
• Memory clock, speed, CAS latency
• PCB height
Very Low Profile Height 0.72in (18.29mm)
184-pin DIMM (standard)
184-pin DIMM (lead-free)
6ns (166MHz), 333 MT/s, CL = 2.5
7.5ns (133 MHz), 266 MT/s, CL = 2
7.5ns (133 MHz), 266 MT/s, CL = 2
7.5ns (133 MHz), 266 MT/s, CL = 2.5
Very Low-Profile 0.72in (18.29mm)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
2. CL = CAS (READ) latency; registered mode
adds one clock cycle to CL.
184-Pin VLP DIMM (MO-206)
©2003, 2004, 2005 Micron Technology, Inc. All rights reserved.
1
2
1
Marking
Features
-26A
-262
-335
-265
G
Y
1
1

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MT18VDVF12872DG-40BD4 Summary of contents

Page 1

... Dual rank PDF: 09005aef81c73825/Source: 09005aef81c73837 DVF18C64_128x72D_1.fm - Rev. A 8/05 EN Products and specifications discussed herein are subject to change by Micron without notice. 512MB, 1GB: (x72, DR) 184-Pin DDR VLP RDIMM www.micron.com/products/modules Figure 1: 184-Pin VLP DIMM (MO-206) Very Low Profile Height 0.72in (18.29mm) Options • Package ...

Page 2

... MT18VDVF12872DY-335__ MT18VDVF12872DG-262__ MT18VDVF12872DY-262__ MT18VDVF12872DG-26A__ MT18VDVF12872DY-26A__ MT18VDVF12872DG-265__ MT18VDVF12872DY-265__ MT18VDVF12872DG-202__ MT18VDVF12872DY-202__ Note: All part numbers end with a two-place code (not shown), designating component and PCB revisions. Consult factory for current revision codes. Example: MT18VDVF6472DY-265B1. PDF: 09005aef81c73825/Source: 09005aef81c73837 DVF18C64_128x72D_1.fm - Rev. A 8/05 EN 512MB, 1GB: (x72, DR) 184-Pin DDR VLP RDIMM 8K (A0– ...

Page 3

Table of Contents Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 4

List of Figures Figure 1: 184-Pin VLP DIMM (MO-206 ...

Page 5

List of Tables Table 1: Address Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 6

Pin Assignments and Descriptions Table 3: Pin Assignment 184-pin DIMM Front Pin Symbol Pin Symbol Pin DQ17 47 REF 2 DQ0 25 DQS2 DQ1 ...

Page 7

Table 4: Pin Descriptions Pin numbers may not correlate with symbols; refer to Pin Assignment tables on page 6 for more information Pin Numbers Symbol 10 RESET# 63, 65, 154 WE#, CAS#, RAS# 137, 138 CK0, CK0# 21,111 CKE0, CKE1 ...

Page 8

... Supply Ground. SS Supply Serial EEPROM positive power supply: +2.3V to +3.6V. DDSPD DNU — Do Not Use: Thes pins are not connected on these modules, but are assigned pins on other modules in this product family. NC — No Connect: These pins should be left unconnected. 8 Pin Assignments and Descriptions Description Micron Technology, Inc ...

Page 9

... Unless otherwise noted, resistor values are 22Ω. Per industry standard, Micron utilizes various component speed grades as referenced in the Module Part Numbering Guide at www.micron.com/numberguide. Standard modules use the following DDR SDRAM devices: MT46V32M8FG (512MB) and MT46V64M8FG (1GB). Lead-free modules use the following DDR SDRAM devices: MT46V32M8BG (512MB) and MT46V64M8BG (1GB). ...

Page 10

... Input data is registered on both edges of DQS, and output data is referenced to both edges of DQS, as well as to both edges of CK. Read and write accesses to DDR SDRAM modules are burst oriented; accesses start at a selected location and continue for a programmed number of locations in a programmed sequence ...

Page 11

SDRAM organizations and timing parameters. The remaining 128 bytes of stor- age are available for use by the customer. System READ/WRITE operations between the master (system logic) and the slave EEPROM device (DIMM) occur via a standard I bus ...

Page 12

Read Latency The READ latency is the delay, in clock cycles, between the registration of a READ com- mand and the availability of the first bit of output data. The latency can be set 2.5 clocks, as ...

Page 13

Table 5: Burst Definition Table Burst Length Notes: 1. For a burst length of two, A1–Ai select the two-data-element block; A0 selects the first access within the block. 2. For a burst length of four, A2–Ai select the four-data-element block; ...

Page 14

Figure 5: CAS Latency Diagram CK# COMMAND DQS DQ CK# COMMAND DQS DQ Operating Mode The normal operating mode is selected by issuing a MODE REGISTER SET command with bits A7–A12 each set to zero, and bits A0–A6 set to ...

Page 15

DLL Enable/Disable The DLL must be enabled for normal operation. DLL enable is required during power- up initialization and upon returning to normal operation after having disabled the DLL for the purpose of debug or evaluation. When the device exits ...

Page 16

Commands Table 7, Commands Truth Table, and Table 8, DM Operation Truth Table, provide a gen- eral reference of available commands. For a more detailed description of commands and operations, refer to the 256Mb or 512Mb DDR SDRAM component data ...

Page 17

Absolute Maximum Ratings Stresses greater than those listed may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions above those indicated in the operational sections ...

Page 18

Electrical Specifications Table 11: I Specifications and Conditions – 512MB DD DDR SDRAM Components Only Notes: 1–5, 8, 10, 12, 47; notes appear on pages 22–26; 0°C ≤ T Parameter/Condition OPERATING CURRENT: One device bank; Active-Precharge ...

Page 19

Table 12: I Specifications and Conditions – 1GB DD DDR SDRAM Components Only Notes: 1–5, 8, 10, 12, 47; notes appear on pages 22–26; 0°C ≤ T Parameter/Condition OPERATING CURRENT: One device bank; Active-Precharge (MIN); CK ...

Page 20

Table 13: Capacitance (512MB only) Note: 11; notes appear on pages 22–26 Parameter Input/Output Capacitance: DQ, DQS, DM Input Capacitance: Command and Address, S#, CKE Input Capacitance: CK, CK# Table 14: Electrical Characteristics and Recommended AC Operating Conditions DDR SDRAM ...

Page 21

Table 14: Electrical Characteristics and Recommended AC Operating Conditions (Continued) DDR SDRAM components only Notes: 1–5, 12–15, 29, 48; notes appear on pages 22–26; 0°C ≤ Characteristics Parameter ACTIVE to ACTIVE/AUTO REFRESH command period AUTO REFRESH command period ...

Page 22

Notes 1. All voltages referenced Tests for AC timing nominal reference/supply voltage levels, but the related specifications and device operation are guaranteed for the full voltage range specified. 3. Outputs measured with equivalent load: Output ...

Page 23

HZ and tions. These parameters are not referenced to a specific voltage level, but specify when the device output is no longer driving (HZ) or begins driving (LZ). 17. The intent of the Don’t Care state after completion ...

Page 24

Figure 7: Derating Data Valid Window ( 3.8 3.750 3.700 3.6 3.4 3.2 NA -335 -262/-26A/-265 @ 10ns 3.0 -262/-26A/-265 @ 7.5ns 2.8 2.6 2.500 2.463 2.4 2.2 2.0 1.8 50/50 49.5/50.5 32. Any ...

Page 25

V IH not be greater than 1/3 of the cycle rate. V width ≤ 3ns and the pulse width can not be greater than 1/3 of the cycle rate. 36 37. HZ (MAX) will prevail over ...

Page 26

remain stable. Although I 45. Whenever the operating frequency is altered, not including jitter, the DLL is required to be reset. This is followed by 200 clock cycles (before READ commands). 46. Leakage number reflects ...

Page 27

Initialization To ensure device operation the DRAM must be initialized as described below: 1. Simultaneously apply power Apply V 3. Assert and hold CKE at a LVCMOS logic LOW. 4. Provide stable clock signals. 5. Wait at ...

Page 28

Figure 10: Initialization Flow Diagram Step PDF: 09005aef81c73825/Source: 09005aef81c73837 DVF18C64_128x72D_2.fm - Rev. A 8/05 EN 512MB, 1GB: (x72, DR) ...

Page 29

Register and PLL Specifications Table 15: Register Timing Requirements and Switching Characteristics Note 1 Register Symbol Paramerter f Clock Frequency clock t Clock to Output Time pd t Reset to Output Time PHL t Pulse Duration w SSTL (bit pattern ...

Page 30

Table 16: PLL Clock Driver Timing Requirements and Switching Characteristics Note: 1 Parameter Symbol Operating Clock Frequency Input Duty Cycle Stabilization Time Cycle to Cycle Jitter Static Phase Offset Output Clock Skew Period Jitter t Half-Period Jitter Input Clock Slew ...

Page 31

... The component case temperature measurements shown above were obtained experimen- tally. The typical system to be used for experimental purposes is a dual-processor 600 MHz work station, fully loaded, with four comparable registered memory modules. Case tem- peratures charted represent worst-case component locations on modules installed in the internal slots of the system ...

Page 32

Serial Presence-Detect SPD Clock And Data Conventions Data states on the SDA line can change only during SCL LOW. SDA state changes during SCL HIGH are reserved for indicating start and stop conditions (Figure 12, "Data Valid- ity," on page ...

Page 33

Figure 13: Definition of Start and Stop SCL SDA Figure 14: Acknowledge Response From Receiver SCL from Master Data Output from Transmitter Data Output from Receiver PDF: 09005aef81c73825/Source: 09005aef81c73837 DVF18C64_128x72D_2.fm - Rev. A 8/05 EN 512MB, 1GB: (x72, DR) 184-Pin ...

Page 34

Table 17: EEPROM Device Select Code The most significant bit (b7) is sent first Select Code Memory Area Select Code (two arrays) Protection Register Select Code Table 18: EEPROM Operating Modes Mode RW Bit Current Address Read Random Address Read ...

Page 35

Table 19: Serial Presence-Detect EEPROM DC Operating Conditions All voltages referenced to V Parameter/Condition Supply Voltage Input High Voltage: Logic 1; All inputs Input Low Voltage: Logic 0; All inputs Output Low Voltage 3mA OUT Input Leakage Current: ...

Page 36

Table 21: Serial Presence-Detect Matrix “1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; notes appear on page 37 Byte Description 0 Number of SPD Bytes used by Micron 1 Total Number of Bytes in SPD Device 2 Fundamental Memory Type ...

Page 37

... Release 1.0 -335 -262 -26A -265 MICRON (Continued) 01–12 1 set to 7ns (0x70) for optimum BIOS compatibility. Actual device specifi- t RAS used for -26A/-265 modules is calculated from Micron Technology, Inc., reserves the right to change products or specifications without notice. 37 Serial Presence-Detect MT18VDVF6472D MT18VDVF12872D ...

Page 38

Module Dimensions All dimensions in inches (millimeters) Figure 16: 184-Pin VLP RDIMM Dimensions 0.079 (2.00) R (4X 0.098 (2.50) D (2X) 0.091 (2.30) TYP. PIN 1 0.050 (1.27) TYP. 0.091 (2.30) 2.55 (64.77) TYP. U12 U13 U14 ...

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