MT9VDDF3272G-40BG3 Micron Technology Inc, MT9VDDF3272G-40BG3 Datasheet - Page 15

• Manufacturer Part Number: MT9VDDF3272G-40BG3
• Description: MODULE DDR SDRAM 256MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9VDDF3272G-40BG3

• Memory Type: DDR SDRAM
• Memory Size: 256MB
• Speed: 200MHz
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 557-1130

Table 13: IDD Specifications and Conditions – 512MB
DDR SDRAM components only
Notes: 1–5, 8, 10, 12, 48; notes appear on pages 18–20; 0°C
pdf: 09005aef80f6ab6a, source: 09005aef80f6ab23
DDAF9C32_64x72G.fm - Rev. C 9/04 EN
PARAMETER/CONDITION
OPERATING CURRENT: One device bank; Active-Precharge;
t
Address and control inputs changing once every two clock cycles
OPERATING CURRENT: One device bank; Active -Read Precharge; Burst = 4;
t
changing once per clock cycle
PRECHARGE POWER-DOWN STANDBY CURRENT: All device banks idle;
Power-down mode;
IDLE STANDBY CURRENT: CS# = HIGH; All device banks idle;
CKE = HIGH; Address and other control inputs changing once per clock
cycle. V
ACTIVE POWER-DOWN STANDBY CURRENT: One device bank active;
Power-down mode;
ACTIVE STANDBY CURRENT: CS# = HIGH; CKE = HIGH; One device bank;
Active-Precharge;
inputs changing twice per clock cycle; Address and other control inputs
changing once per clock cycle
OPERATING CURRENT: Burst = 2; Reads; Continuous burst; One bank
active; Address and control inputs changing once per clock cycle;
(MIN); I
OPERATING CURRENT: Burst = 2; Writes; Continuous burst; One device
bank active; Address and control inputs changing once per clock cycle;
=
AUTO REFRESH CURRENT
SELF REFRESH CURRENT: CKE
OPERATING CURRENT: Four device bank interleaving READs (BL = 4) with
auto precharge,
inputs change only during Active READ, or WRITE commands
CK =
RC =
t
CK (MIN); DQ, DM, and DQS inputs changing twice per clock cycle
t
t
RC (MIN);
CK (MIN); DQ, DM and DQS inputs changing once per clock cyle;
IN
OUT
= V
= 0mA
REF
for DQ, DQS, and DM
t
t
CK =
RC =
t
RC =
t
t
CK =
CK =
t
t
CK (MIN); I
RC (MIN);
t
RAS (MAX);
t
t
CK (MIN); CKE = (LOW)
CK (MIN); CKE = LOW
0.2V
t
OUT
CK =
t
CK =
= 0mA; Address and control inputs
t
CK (MIN); Address and control
t
CK (MIN); DQ, DM andDQS
t
t
REFC =
REFC = 7.8125µs
256MB, 512MB (x72, ECC, SR) PC3200
t
RC =
t
CK =
15
T
A
t
t
RFC (MIN)
RC (MIN);
t
t
+70°C; V
CK =
CK MIN;
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
t
184-PIN DDR SDRAM RDIMM
CK
CK
DD
= V
I
I
I
SYM
I
I
I
I
DD4W
I
DD3N
DD5A
I
DD2P
DD3P
DD4R
I
I
I
DD2F
DD 0
DD1
DD5
DD6
DD7
DD
Q = +2.6V ±0.1V
MAX
1,395
1,665
1,710
1,755
3,105
4,050
-40B
495
405
540
45
99
45
©2004 Micron Technology, Inc. All rights reserved.
UNITS
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
21, 28, 44
21, 28, 44
NOTES
20, 42
20, 42
20, 42
20, 44
24, 44
20, 43
45
41
20
9