4N32W Fairchild Optoelectronics Group, 4N32W Datasheet

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4N32W

Manufacturer Part Number
4N32W
Description
OPTOCOUPLER DARL-OUT WIDE 6-DIP
Manufacturer
Fairchild Optoelectronics Group
Datasheet

Specifications of 4N32W

Number Of Channels
1
Input Type
DC
Voltage - Isolation
5300Vrms
Current Transfer Ratio (min)
500% @ 10mA
Voltage - Output
30V
Current - Output / Channel
150mA
Current - Dc Forward (if)
80mA
Vce Saturation (max)
1V
Output Type
Darlington with Base
Mounting Type
Through Hole
Package / Case
6-DIP (0.400", 10.16mm)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current Transfer Ratio (max)
-
DESCRIPTION
FEATURES
APPLICATIONS
TOTAL DEVICE
EMITTER
DETECTOR
The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium
arsenide infrared emitter optically coupled to a silicon
planar photodarlington.
• High sensitivity to low input drive current
• Meets or exceeds all JEDEC Registered Specifications
• VDE 0884 approval available as a test option
• Low power logic circuits
• Telecommunications equipment
• Portable electronics
• Solid state relays
• Interfacing coupling systems of different potentials and impedances.
ABSOLUTE MAXIMUM RATINGS
-add option .300. (e.g., 4N29.300)
Parameter
Storage Temperature
Operating Temperature
Lead Solder Temperature
Total Device Power Dissipation @ T
Continuous Forward Current
Reverse Voltage
Forward Current - Peak (300 µs, 2% Duty Cycle)
LED Power Dissipation @ T
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Collector Breakdown Voltage
Detector Power Dissipation @ T
Continuous Collector Current
Derate above 25°C
Derate above 25°C
Derate above 25°C
A
= 25°C
A
= 25°C
A
= 25°C
(T
PHOTODARLINGTON OPTOCOUPLERS
A
= 25°C Unless otherwise specified.)
4N29
Symbol
BV
BV
BV
I
T
T
T
GENERAL PURPOSE 6-PIN
F
P
V
P
P
STG
OPR
SOL
(pk)
I
I
CEO
CBO
ECO
C
F
D
R
D
D
4N30
260 for 10 sec
-55 to +150
-55 to +100
4N31
Value
250
150
150
150
3.3
3.0
2.0
2.0
80
30
30
3
5
4/25/00
CATHODE
ANODE
4N32
N/C
1
2
3
SCHEMATIC
mW/°C
mW/°C
mW/°C
Units
mW
mW
mW
mA
mA
°C
°C
°C
200038B
V
A
V
V
V
4N33
6 BASE
5
4
COLLECTOR
EMITTER

Related parts for 4N32W

4N32W Summary of contents

Page 1

DESCRIPTION The 4N29, 4N30, 4N31, 4N32, 4N33 have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. FEATURES • High sensitivity to low input drive current • Meets or exceeds all JEDEC Registered Specifications • VDE 0884 ...

Page 2

ELECTRICAL CHARACTERISTICS INDIVIDUAL COMPONENT CHARACTERISTICS Parameter EMITTER *Input Forward Voltage *Reverse Leakage Current *Capacitance DETECTOR *Collector-Emitter Breakdown Voltage V *Collector-Base Breakdown Voltage *Emitter-Collector Breakdown Voltage *Collector-Emitter Dark Current DC Current Gain TRANSFER CHARACTERISTICS DC Characteristic (1,2) *Collector Output Current (4N32, ...

Page 3

PHOTODARLINGTON OPTOCOUPLERS Fig. 1 Output Current vs. Input Current T = 0˚C, 25˚ 70˚ 100˚ -55˚ NORMALIZED TO: CTR @ 25˚C A ...

Page 4

TYPICAL ELECTRO-OPTICAL CHARACTERISTIC CURVES (25°C Free air temperature unless otherwise specified) (Cont.) Test Circuit 200 mA F INPUT PULSE WIDTH <1 ms Fig. 7 Switching Time Test Circuit and Waveforms Notes * Indicates JEDEC registered data. 1. ...

Page 5

Package Dimensions (Through Hole) PIN 1 ID. 0.270 (6.86) 0.240 (6.10) 0.350 (8.89) 0.330 (8.38) 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.115 (2.92) 0.020 (0.51) 0.154 (3.90) MIN 0.100 (2.54) 0.016 (0.40) 0.008 (0.20) 0.022 (0.56) 0° to 15° 0.016 ...

Page 6

ORDERING INFORMATION Option 300 300W 3S 3SD QT Carrier Tape Specifications (“D” Taping Orientation) 4.85 ± 0.20 13.2 ± 0.2 0.1 MAX NOTE All dimensions are in millimeters Call QT Optoelectronics for more information or the phone ...

Page 7

DISCLAIMER LIFE SUPPORT POLICY GENERAL PURPOSE 6-PIN PHOTODARLINGTON OPTOCOUPLERS 4/25/00 200038B ...

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