4N25 Fairchild Optoelectronics Group, 4N25 Datasheet

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4N25

Manufacturer Part Number
4N25
Description
OPTOCOUPLER TRANS-OUT 6-DIP
Manufacturer
Fairchild Optoelectronics Group
Datasheet

Specifications of 4N25

Number Of Channels
1
Input Type
DC
Voltage - Isolation
5300Vrms
Current Transfer Ratio (min)
20% @ 10mA
Voltage - Output
30V
Current - Dc Forward (if)
100mA
Vce Saturation (max)
500mV
Output Type
Transistor with Base
Mounting Type
Through Hole
Package / Case
6-DIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output / Channel
-
Current Transfer Ratio (max)
-
Other names
4N25FS
4N25QT
4N25QT

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DESCRIPTION
The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin
dual in-line package.
FEATURES
• Also available in white package by specifying -M suffix, eg. 4N25-M
• UL recognized (File # E90700)
• VDE recognized (File # 94766)
APPLICATIONS
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
© 2003 Fairchild Semiconductor Corporation
4N25
4N37
- Add option V for white package (e.g., 4N25V-M)
- Add option 300 for black package (e.g., 4N25.300)
BLACK PACKAGE (NO -M SUFFIX)
WHITE PACKAGE (-M SUFFIX)
6
6
6
6
H11A1
4N26
1
1
1
1
6
6
1
1
PHOTOTRANSISTOR OPTOCOUPLERS
H11A2
4N27
Page 1 of 15
GENERAL PURPOSE 6-PIN
H11A3
4N28
SCHEMATIC
1
2
3
H11A4
PIN 1. ANODE
4N35
NC
2. CATHODE
3. NO CONNECTION
4. EMITTER
5. COLLECTOR
6. BASE
6
5
4
H11A5
4N36
5/7/03

Related parts for 4N25

4N25 Summary of contents

Page 1

... The general purpose optocouplers consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin dual in-line package. FEATURES • Also available in white package by specifying -M suffix, eg. 4N25-M • UL recognized (File # E90700) • VDE recognized (File # 94766) - Add option V for white package (e.g., 4N25V-M) - Add option 300 for black package (e ...

Page 2

... H11A1 ABSOLUTE MAXIMUM RATINGS Parameter TOTAL DEVICE Storage Temperature Operating Temperature Wave solder temperature (see page 14 for reflow solder profiles) Total Device Power Dissipation @ T A Derate above 25°C EMITTER DC/Average Forward Input Current Reverse Input Voltage Forward Current - Peak (300µs, 2% Duty Cycle) LED Power Dissipation @ T = 25° ...

Page 3

... H11A1 ELECTRICAL CHARACTERISTICS INDIVIDUAL COMPONENT CHARACTERISTICS Parameter EMITTER Input Forward Voltage Reverse Leakage Current DETECTOR Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Dark Current Collector-Base Dark Current Capacitance ISOLATION CHARACTERISTICS Characteristic (Non ‘-M’, Black Package Hz min) ...

Page 4

... H11A4 4N35 4N36 40 4N37 4N35 4N36 40 4N37 4N25 4N26 0.5 4N27 4N28 4N35 4N36 0.3 4N37 H11A1 H11A2 H11A3 0.4 H11A4 H11A5 4N25 4N26 4N27 4N28 H11A1 2 H11A2 H11A3 H11A4 H11A5 4N35 4N36 2 10 4N37 Unit % V µs µs 5/7/03 ...

Page 5

... Unless otherwise specified.) (Continued) A Test Conditions Symbol = 100 Ω (Fig.20) T OFF = 100 Ω (Fig.20) Page 4N35 4N36 H11A4 H11A5 Device Min Typ* Max 4N25 4N26 4N27 4N28 H11A1 2 H11A2 H11A3 H11A4 H11A5 4N35 4N36 2 10 4N37 Unit µs 5/7/03 ...

Page 6

... H11A1 TYPICAL PERFORMANCE CURVES Fig. 1 LED Forward Voltage vs. Forward Current (Black Package) 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1 LED FORWARD CURRENT (mA) F Fig.3 Normalized CTR vs. Forward Current (Black Package 25°C A 1.2 1.0 0.8 0.6 0.4 ...

Page 7

... H11A1 Fig. 7 CTR vs. RBE (Unsaturated) (Black Package) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 BASE RESISTANCE (kΩ) BE Fig. 9 CTR vs. RBE (Saturated) (Black Package) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 BASE RESISTANCE (k Ω) ...

Page 8

... H11A1 Fig. 13 Switching Speed vs. Load Resistor (Black Package) 1000 25°C A 100 T off 0.1 0.1 1 R-LOAD RESISTOR (kΩ) Fig. 15 Normalized t (Black Package) 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 10 100 - BASE RESISTANCE (k Ω Fig. 17 Normalized t (Black Package) 1 ...

Page 9

... H11A1 I F INPUT © 2003 Fairchild Semiconductor Corporation GENERAL PURPOSE 6-PIN PHOTOTRANSISTOR OPTOCOUPLERS 4N27 4N28 H11A2 H11A3 Fig. 19 Dark Current vs. Ambient Temperature 10000 25°C A 1000 100 10 1 0.1 0.01 0.001 AMBIENT TEMPERATURE (°C) A TEST CIRCUIT V = 10V 10% OUTPUT 90% ...

Page 10

... H11A1 Black Package (No -M Suffix) Package Dimensions (Through Hole) PIN 1 ID. 0.270 (6.86) 0.240 (6.10) 0.350 (8.89) 0.330 (8.38) 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.115 (2.92) 0.020 (0.51) 0.154 (3.90) MIN 0.100 (2.54) 0.016 (0.40) 0.008 (0.20) 0.022 (0.56) 0° ...

Page 11

... H11A1 White Package (-M Suffix) Package Dimensions (Through Hole) 0.350 (8.89) 0.320 (8.13) Pin 1 ID 0.260 (6.60) 0.240 (6.10) 0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25) 0.200 (5.08) 0.115 (2.93) 0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.100 (2.54) 0.016 (0.41) Package Dimensions (0.4” ...

Page 12

... Assembly package code Page 4N35 H11A4 Option Surface Mount Lead Bend Surface Mount; Tape and reel 0.4" Lead Spacing VDE 0884 VDE 0884, 0.4" Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape & Reel 4N25 White Package, -M Suffix 4N36 H11A5 ...

Page 13

... H11A1 QT Carrier Tape Specifications (Black Package, No Suffix) 4.85 ± 0.20 0.30 ± 0.05 13.2 ± 0.2 0.1 MAX QT Carrier Tape Specifications (White Package, -M Suffix) 4.5 ± 0.20 0.30 ± 0.05 21.0 ± 0.1 0.1 MAX © 2003 Fairchild Semiconductor Corporation ...

Page 14

... H11A1 Reflow Profile (White Package, -M Suffix) 300 250 245°C peak 200 150 Time above 183°C, 120–180 sec 100 Ramp up = 2–10°C/sec 0.5 1 1.5 2 Time (Minute) Reflow Profile (Black Package, No Suffix) ...

Page 15

... H11A1 DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. ...

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