FOD817 Fairchild Optoelectronics Group, FOD817 Datasheet

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FOD817

Manufacturer Part Number
FOD817
Description
OPTOCOUPLER PHOTOTRANS OUT 4DIP
Manufacturer
Fairchild Optoelectronics Group
Datasheet

Specifications of FOD817

Number Of Channels
1
Input Type
DC
Voltage - Isolation
5000Vrms
Current Transfer Ratio (min)
50% @ 5mA
Current Transfer Ratio (max)
600% @ 5mA
Voltage - Output
70V
Current - Output / Channel
50mA
Current - Dc Forward (if)
50mA
Vce Saturation (max)
100mV
Output Type
Transistor
Mounting Type
Through Hole
Package / Case
4-DIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.4
FOD814 Series, FOD817 Series
4-Pin High Operating Temperature
Phototransistor Optocouplers
Features
Applications
FOD814 Series
FOD817 Series
Functional Block Diagram
ANODE, CATHODE
CATHODE, ANODE
AC input response (FOD814 only)
Applicable to Pb-free IR reflow soldering
Compact 4-pin package
Current transfer ratio in selected groups:
FOD814: 20–300%
FOD814A: 50–150%
C-UL, UL and VDE approved
High input-output isolation voltage of 5000Vrms
Minimum BV
Higher operating temperatures (versus H11AXXX
counterparts)
AC line monitor
Unknown polarity DC sensor
Telephone line interface
Power supply regulators
Digital logic inputs
Microprocessor inputs
CEO
1
2
of 70V guaranteed
FOD814
FOD817: 50–600%
FOD817A: 80–160%
FOD817B: 130–260%
FOD817C: 200–400%
FOD817D: 300–600%
4
3
COLLECTOR
EMITTER
CATHODE
ANODE
1
2
Description
The FOD814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The FOD817 Series consists of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 4-pin dual in-line package.
FOD817
4
3 EMITTER
COLLECTOR
4
www.fairchildsemi.com
July 2009
1

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FOD817 Summary of contents

Page 1

... Description The FOD814 consists of two gallium arsenide infrared emitting diodes, connected in inverse parallel, driving a silicon phototransistor output in a 4-pin dual in-line package. The FOD817 Series consists of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 4-pin dual in-line package. 4 COLLECTOR ...

Page 2

... Collector-Emitter Voltage CEO V Emitter-Collector Voltage ECO I Continuous Collector Current C P Collector Power Dissipation C Derate above 90°C ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1 25°C Unless otherwise specified.) A FOD814 -55 to +105 ±50 2 Value Units FOD817 -55 to +150 °C -55 to +110 ° ...

Page 3

... Saturation Voltage AC Transfer Characteristics Symbol AC Characteristic f Cut-Off Frequency C t Response Time (Rise Response Time (Fall) f *Typical values 25°C A ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1 25°C Unless otherwise specified.) A Device Test Conditions FOD814 I = ±20mA F FOD817 I = 20mA F FOD817 ...

Page 4

... Current Transfer Ratio (CTR For test circuit setup and waveforms, refer to page 7. 3. For this test, Pins 1 and 2 are common, and Pins 3 and 4 are common. ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1 25°C Unless otherwise specified.) (Continued) A ...

Page 5

... Fig. 5 Forward Current vs. Forward Voltage (FOD817) 100 110 0.1 0.5 1.0 FORWARD VOLTAGE V ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1 25°C Unless otherwise specified.) A 200 150 100 50 0 -55 (°C) A Fig. 4 Forward Current vs. Forward Voltage 100 Ta = 25° 0.1 7.5 10.0 12.5 15 ...

Page 6

... Fig. 11 LED Power Dissipation vs. Ambient Temperature (FOD814) 100 -55 -40 - 100 120 AMBIENT TEMPERATURE T A (°C) ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4 (Continued Ta= 25°C (V) CE Fig. 10 Collector-Emitter Saturation Voltage 0.12 0.10 0.08 0.06 0.04 0.02 0.00 (°C) ...

Page 7

... LOAD RESISTANCE Test Circuit for Response Time Vcc Output Input D ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4 (Continued -10 - Fig. 15 Collector Dark Current vs. Ambient Temperature 10000 V = 20V CE 1000 100 10 1 0.1 0.01 -60 -40 - 100 120 AMBIENT TEMPERATURE T A (° ...

Page 8

... Fairchild products. Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/packaging/ ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4 Surface Mount 0.312 (7.92) 0.288 (7.32) ...

Page 9

... FOD814300W 3S FOD8143S 3SD FOD8143SD Marking Information Definitions ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4 FOD814S VDE Approved, 0.4" Lead Spacing VDE Approved, Surface Mount, Tape & Reel 814 1 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option – ...

Page 10

... All dimensions are in millimeters. Symbol W Tape wide P Pitch of sprocket holes 0 F Distance of compartment Distance of compartment to compartment 1 A0 Compartment B0 K0 ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1 Description 1.75 0 0.3 0.05 K0 Dimensions in mm (inches) 16 ± 0.3 (.63) 4 ± 0.1 (.15) 7.5 ± ...

Page 11

... Melt soldering zone Peak temperature (Tp) Ramp-down rate Recommended Wave Soldering condition Profile Feature Peak temperature (Tp) ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4 ts (Preheat) Time (sec) Pb-Sn solder assembly 100°C ~ 150° 120 sec 183° 120 sec 240 +0/-5° ...

Page 12

... Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4 ® PowerTrench ® PowerXS™ SM Programmable Active Droop™ ® QFET QS™ Quiet Series™ ...

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