FOD817D Fairchild Optoelectronics Group, FOD817D Datasheet

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FOD817D

Manufacturer Part Number
FOD817D
Description
OPTOCOUPLER PHOTOTRANS OUT 4DIP
Manufacturer
Fairchild Optoelectronics Group
Datasheet

Specifications of FOD817D

Number Of Channels
1
Input Type
DC
Voltage - Isolation
5000Vrms
Current Transfer Ratio (min)
300% @ 5mA
Current Transfer Ratio (max)
600% @ 5mA
Voltage - Output
70V
Current - Output / Channel
50mA
Current - Dc Forward (if)
50mA
Vce Saturation (max)
100mV
Output Type
Transistor
Mounting Type
Through Hole
Package / Case
4-DIP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2006 Fairchild Semiconductor Corporation
FOD814 Series, FOD817 Series Rev. 1.1.4
FOD814 Series, FOD817 Series
4-Pin High Operating Temperature
Phototransistor Optocouplers
Features
Applications
FOD814 Series
FOD817 Series
Functional Block Diagram
ANODE, CATHODE
CATHODE, ANODE
AC input response (FOD814 only)
Applicable to Pb-free IR reflow soldering
Compact 4-pin package
Current transfer ratio in selected groups:
FOD814: 20–300%
FOD814A: 50–150%
C-UL, UL and VDE approved
High input-output isolation voltage of 5000Vrms
Minimum BV
Higher operating temperatures (versus H11AXXX
counterparts)
AC line monitor
Unknown polarity DC sensor
Telephone line interface
Power supply regulators
Digital logic inputs
Microprocessor inputs
CEO
1
2
of 70V guaranteed
FOD814
FOD817: 50–600%
FOD817A: 80–160%
FOD817B: 130–260%
FOD817C: 200–400%
FOD817D: 300–600%
4
3
COLLECTOR
EMITTER
CATHODE
ANODE
1
2
Description
The FOD814 consists of two gallium arsenide infrared
emitting diodes, connected in inverse parallel, driving a
silicon phototransistor output in a 4-pin dual in-line
package. The FOD817 Series consists of a gallium
arsenide infrared emitting diode driving a silicon
phototransistor in a 4-pin dual in-line package.
FOD817
4
3 EMITTER
COLLECTOR
4
www.fairchildsemi.com
July 2009
1

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FOD817D Summary of contents

Page 1

... Current transfer ratio in selected groups: FOD814: 20–300% FOD817: 50–600% FOD814A: 50–150% FOD817A: 80–160% FOD817B: 130–260% FOD817C: 200–400% FOD817D: 300–600% C-UL, UL and VDE approved High input-output isolation voltage of 5000Vrms Minimum BV of 70V guaranteed CEO Higher operating temperatures (versus H11AXXX ...

Page 2

Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure ...

Page 3

... FOD817 I = 0.1mA FOD814 I = 10µ FOD817 I = 10µ Device Test Conditions (1) FOD814 I = ±1mA FOD814A (1) FOD817 I = 5mA FOD817A FOD817B FOD817C FOD817D FOD814 I = ±20mA 1mA F C FOD817 I = 20mA 1mA F C Device Test Conditions FOD814 2mA -3dB FOD814 2mA FOD817 FOD814, FOD817 3 Min. ...

Page 4

Electrical Characteristics Isolation Characteristics Symbol Characteristic V Input-Output Isolation ISO (3) Voltage R Isolation Resistance ISO C Isolation Capacitance ISO *Typical values 25°C A Notes: 1. Current Transfer Ratio (CTR For test circuit setup ...

Page 5

Typical Electrical/Optical Characteristics Fig. 1 Collector Power Dissipation vs. Ambient Temperature (FOD814) 200 150 100 50 0 -55 -40 - 100 120 AMBIENT TEMPERATURE T Fig. 3 Collector-Emitter Saturation Voltage vs. Forward Current 6 Ic ...

Page 6

Typical Electrical/Optical Characteristics Fig. 7 Collector Current vs. Collector-Emitter Voltage (FOD814 30mA AX.) 30 10mA 20 5mA ...

Page 7

Typical Electrical/Optical Characteristics Fig. 13 Response Time vs. Load Resistance 100 Ic= 2mA Ta = 25° 0.5 0.2 0.1 0.1 0.2 0.5 1 LOAD RESISTANCE ...

Page 8

Package Dimensions Through Hole 0.200 (5.10) 0.161 (4.10) 0.157 (4.00) 0.118 (3.00) 0.130 (3.30) 0.020 (0.51) 0.091 (2.30) TYP 0.150 (3.80) 0.110 (2.80) 0.024 (0.60) 0.016 (0.40) 0.110 (2.79) 0.090 (2.29) 0.4" Lead Spacing 0.200 (5.10) 0.157 (4.00) 0.161 (4.10) ...

Page 9

Ordering Information Option Part Number Example S SD FOD814SD 300 FOD814300 300W FOD814300W 3S FOD8143S 3SD FOD8143SD Marking Information Definitions ©2006 Fairchild Semiconductor Corporation FOD814 Series, FOD817 Series Rev. 1.1.4 FOD814S VDE Approved, 0.4" ...

Page 10

Carrier Tape Specifications Ø1.55 0.05 Note: All dimensions are in millimeters. Symbol W Tape wide P Pitch of sprocket holes 0 F Distance of compartment Distance of compartment to compartment 1 A0 Compartment B0 K0 ©2006 Fairchild ...

Page 11

Lead Free Recommended IR Reflow Condition Tp Tsmax Tsmin 25 C Profile Feature Preheat condition (Tsmin-Tsmax / ts) Melt soldering zone Peak temperature (Tp) Ramp-down rate Recommended Wave Soldering condition Profile Feature Peak temperature (Tp) ©2006 Fairchild Semiconductor Corporation FOD814 ...

Page 12

TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Auto-SPM™ F-PFS™ FRFET Build it Now™ CorePLUS™ Global ...

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