NCP5220MNR2G ON Semiconductor, NCP5220MNR2G Datasheet - Page 6

• Manufacturer Part Number: NCP5220MNR2G
• Description: IC CTLR PWM DUAL BUCK PWR 20-DFN
• Manufacturer: ON Semiconductor

Specifications of NCP5220MNR2G

• Applications: Controller, DDR
• Voltage - Input: 5 ~ 12 V
• Number Of Outputs: 2
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 20-TFDFN
• Switching Frequency: 250 KHz
• Operating Temperature Range: 0 C to + 70 C
• Mounting Style: SMD/SMT
• Duty Cycle (max): 100%
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Output: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: NCP5220MNR2G; NCP5220MNR2GOSTR

ELECTRICAL CHARACTERISTICS
COUT2 = 470 mF, COUT3 = NA, CSS = 33 nF, R1 = 2.166 kW, R2 = 2.0 kW, RZ1 = 20 kW, RZ2 = 8.0 W, CP1 = 10 nF,
CZ1 = 6.8 nF, CZ2 = 100 nF, RM1 = 2.166 kW, RM2 = 2.0 kW, RZM1 = 20 kW, RZM2 = 8.0 W, CPM1 = 10 nF, CZM1 = 6.8 nF,
CZM2 = 100 nf for min/max values unless otherwise noted). Duplicate component values of MCH regulator from DDQ.
VTT ACTIVE TERMINATION REGULATOR
CONTROL SECTION
GATE DRIVERS
MCH SWITCHING REGULATOR
4. Guaranteed by design, not tested in production.
VTT tracking DDQ_REF/2 at S0 mode
VTT Source Current Limit
VTT Sink Current Limit
SLP_S5, SLP_S3 Input Logic HIGH
SLP_S5, SLP_S3 Input Logic LOW
SLP_S5, SLP_S3 Input Current
TGDDQ Gate Pull−HIGH Resistance
TGDDQ Gate Pull−LOW Resistance
BGDDQ Gate Pull−HIGH Resistance
BGDDQ Gate Pull−LOW Resistance
TG1P5 Gate Pull−HIGH Resistance
TG1P5 Gate Pull−LOW Resistance
BG1P5 Gate Pull−HIGH Resistance
BG1P5 Gate Pull−LOW Resistance
VFB1P5 Feedback Voltage, Control Loo
in Regulation
Feedback Input Current
Oscillator Frequency
Oscillator Ramp Amplitude
Minimum Duty Cycle
Maximum Duty Cycle
Soft−Start Pin Current for V1P5 Regulator
Characteristic
(5VDUAL = 5.0 V, BOOT = 12 V, T
dV1P5OSC
Dmax_1P5
ILIMVTsnk
Dmin_1P5
ILIMVTsrc
RH_BPG
RH_TPG
RL_BPG
DVTTS0
RL_TPG
Symbol
Logic_H
VFB1P5
Logic_L
RH_TG
RH_BG
I1P5FB
RL_TG
RL_BG
Ilogic
F1P5
ISS2
http://onsemi.com
NCP5220
6
IOUT= 0 to –2.0 A (source current)
VCC = 12 V, V(TGDDQ) = 11.9 V
VCC = 12 V, V(BGDDQ) = 11.9 V
VCC = 12 V, V(BGDDQ) = 0.1 V
VCC = 12 V, V(TG1P5) = 11.9 V
VCC = 12 V, V(BG1P5) = 11.9 V
VCC = 12 V, V(TGDDQ) = 0.1 V
VCC = 12 V, V(BG1P5) = 0.1 V
IOUT= 0 to 2.0 A (sink current)
VCC = 12 V, V(TG1P5) = 0.1 V
A
Test Conditions
T
= 0°C to 70°C, L = 1.7 mH, COUT1 = 3770 mF,
A
= 0°C to 70°C
(Note 4)
(Note 4)
0.784
Min
−30
217
2.0
2.0
2.0
0
Typ
250
3.0
2.5
3.0
1.3
3.0
2.5
3.0
1.3
0.8
1.3
8.0
0.816
Max
283
100
0.8
1.0
1.0
30
Vp−p
Unit
KHz
mV
mA
mA
mA
%
%
W
W
W
W
W
W
W
W
A
A
V
V
V