BUK1M200-50SDLD,51 NXP Semiconductors, BUK1M200-50SDLD,51 Datasheet - Page 8

• Manufacturer Part Number: BUK1M200-50SDLD,51
• Description: MOSFET N-CH 50V 20SOIC
• Manufacturer: NXP Semiconductors
• Series: TOPFET™r
• Type: Low Sider

Specifications of BUK1M200-50SDLD,51

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 150 mOhm
• Current - Output / Channel: 2.7A
• Current - Peak Output: 6.1A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -

Philips Semiconductors
9397 750 10956
Product data
Fig 9. Overtemperature protection characteristic;
Fig 11. Input-source current as a function of
T
(1) Protection latched.
(2) Normal operation.
T j(th)
200
( C)
190
180
170
160
(mA)
j
0.8
0.6
0.4
0.2
I IS
= 25 C
1
0
threshold junction temperature as a function of
input-source voltage; typical values.
input-source voltage; typical values.
0
0
2
2
4
4
(1)
6
(2)
6
8
V IS (V)
V IS (V)
03pa76
03pa78
10
8
Rev. 01 — 02 April 2003
Fig 10. Input-source threshold voltage as a function of
Fig 12. Input clamping characteristic; input current as
V IS(th)
I
T
(V)
D
j
(mA)
2.5
1.5
0.5
= 25 C
= mA; V
10
I I
2
1
0
8
6
4
2
0
junction temperature.
a function of input-source voltage; typical
values.
-50
0
BUK1M200-50SDLD
DS
= 5 V
0
2
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
50
4
Quad channel TOPFET™
max.
typ.
min.
100
6
V IS (V)
T j ( C)
03pa77
03pa79
150
8
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