BUK1M200-50SDLD,51 NXP Semiconductors, BUK1M200-50SDLD,51 Datasheet - Page 4

• Manufacturer Part Number: BUK1M200-50SDLD,51
• Description: MOSFET N-CH 50V 20SOIC
• Manufacturer: NXP Semiconductors
• Series: TOPFET™r
• Type: Low Sider

Specifications of BUK1M200-50SDLD,51

• Input Type: Non-Inverting
• Number Of Outputs: 4
• On-state Resistance: 150 mOhm
• Current - Output / Channel: 2.7A
• Current - Peak Output: 6.1A
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: 20-SOIC (7.5mm Width)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -

Philips Semiconductors
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
[3]
[4]
[5]
[6]
9397 750 10956
Product data
Symbol
V
I
P
I
T
T
Overvoltage clamping
E
E
Overload protection
V
Reverse diode
I
Electrostatic discharge
V
I
IMS
S
DS
tot
stg
j
DS(CL)S
DS(CL)R
DS(prot)
esd
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
For all devices active.
Not in an overload condition with drain current limiting.
At a drain-source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
Single active device.
With the protection supply provided via the input pin, the TOPFET is protected from short circuit loads. Overload protection operates by
means of drain current limiting and by activating the overtemperature protection.
Parameter
drain-source voltage
input current
total power dissipation
non-repetitive peak input current
storage temperature
junction temperature
non-repetitive drain-source
clamping energy
repetitive drain-source clamping
energy
protected drain-source voltage
source (diode forward) current
electrostatic discharge voltage
Limiting values
[6]
[4]
Conditions
clamping
T
t
normal operation
T
inductive load
T
V
T
C = 250 pF; R = 1.5 k
p
sp
amb
sp
sp
IS
Rev. 01 — 02 April 2003
1 ms
= 25 C; I
4 V
25 C;
125 C; I
25 C; V
Figure 4
IS
DM
DM
= 0 V
= 50 mA; f = 250 Hz
I
D(lim)
(refer to
BUK1M200-50SDLD
Table
5);
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
[1]
[2]
[3]
[5]
[5]
Quad channel TOPFET™
Min
-
-
-
-
-
-
-
-
-
-
55
Max
50
3
9.4
10
+150
150
100
5
35
2
2
Unit
V
mA
W
mA
mJ
mJ
V
A
kV
C
C
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