BUK1M200-50SDLD,51 NXP Semiconductors, BUK1M200-50SDLD,51 Datasheet - Page 10
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BUK1M200-50SDLD,51
Manufacturer Part Number
BUK1M200-50SDLD,51
Description
MOSFET N-CH 50V 20SOIC
Manufacturer
NXP Semiconductors
Series
TOPFET™r
Type
Low Sider
Datasheet
1.BUK1M200-50SDLD51.pdf
(14 pages)
Specifications of BUK1M200-50SDLD,51
Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
150 mOhm
Current - Output / Channel
2.7A
Current - Peak Output
6.1A
Operating Temperature
-40°C ~ 150°C
Mounting Type
Surface Mount
Package / Case
20-SOIC (7.5mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Philips Semiconductors
7. Dynamic characteristics
Table 6:
9397 750 10956
Product data
Symbol
Turn-on measured from the input going HIGH
t
t
t
t
d(on)
r
d(off)
f
Fig 17. Drain-source leakage current as a function of
Fig 19. Test circuit for resistive load switching times.
V
I DSS
10 -5
10 -6
10 -7
10 -8
(A)
DS
junction temperature; typical values.
= 40 V; V
-50
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
Switching characteristics
MBL853
V DD
IS
= 0 V
0
V IS
50
P
100
R L
T j ( C)
03pa84
V DS
Conditions
R
Figure 19
150
L
= 50 ; I
Rev. 01 — 02 April 2003
and 20; T
D
= 250 mA; V
Fig 18. Drain current limiting as a function of solder
Fig 20. Resistive load switching waveforms.
sp
V
V DS
V IS
IS
= 25 C
(A)
I D
1.2
0.6
1.8
= 5 V
point temperature.
0
IS
0
= 5 V;
BUK1M200-50SDLD
t d(on)
90%
10%
10%
90%
40
max.
min.
typ.
t f
© Koninklijke Philips Electronics N.V. 2003. All rights reserved.
Min
-
-
-
-
80
Quad channel TOPFET™
Typ
5
11
25
14
120
t d(off)
T sp ( C)
Max
12
30
65
35
03pa72
t r
160
MBL854
Unit
10 of 14
s
s
s
s