IDT71P72604S167BQG IDT, Integrated Device Technology Inc, IDT71P72604S167BQG Datasheet
IDT71P72604S167BQG
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IDT71P72604S167BQG Summary of contents
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... DATA (Note1) REG WRITE DRIVER ADD (Note2) REG (Note4) 18M MEMORY ARRAY CLK GEN SELECT OUTPUT CONTROL 1 IDT71P72804 IDT71P72604 TM Burst of two SRAMs are high-speed synchro- (Note4) (Note1) ...
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... D[X:0]. Upon the rising edge of K, the second word of the burst will be latched, along with the designated address. Both the first and second words of the burst will then be written into memory as designated by the address and byte write enables. Output Enables The QDRII SRAM automatically enables and disables the Q[X:0] outputs ...
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Mb QDR II SRAM Burst of 2 Pin Definitions Symbol Pin Function Data input signals, sampled on the rising edge of K and K clocks during valid write operations Input D[X:0] ...
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Mb QDR II SRAM Burst of 2 Pin Definitions continued Symbol Pin Function DLL Turn Off. When low this input will turn off the DLL inside the device. The AC timings ...
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Mb QDR II SRAM Burst of 2 Pin Configuration IDT71P72804 ( ...
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Mb QDR II SRAM Burst of 2 Pin Configuration IDT71P72604 (512K x 36 NC ...
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Mb QDR II SRAM Burst of 2 Absolute Maximum Ratings Symbol Rating V Supply Voltage on V with TERM DD Respect to GND V Supply Voltage on V with TERM DDQ ...
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... Mb QDR II SRAM Burst of 2 Application Example Data In Data Out Address MEMORY CONTROLLER R R Return CLK Source CLK Return Source SRAM #1 ZQ 250 REF 6.42 8 Commercial and IndustrialTemperature Range SRAM # 6109 drw 20 250 V T ...
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Mb QDR II SRAM Burst Electrical Characteristics Over the Operating Temperature and Supply Voltage Range Parameter Symbol Input Leakage Current I IL Output Leakage Current I OL Operating ...
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Mb QDR II SRAM Burst of 2 Input Electrical Characteristics Over the Operating Temperature and Supply Voltage Range (V = 1.8 ± 100mV 1.4V to 1.9V) DD DDQ Parameter ...
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Mb QDR II SRAM Burst Test Conditions (1) Parameter Symbol Core Power Supply Voltage V DD I/O Power Supply Voltage V DDQ Input High Level V IH Input ...
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Mb QDR II SRAM Burst Electrical Characteristics (VDD = 1.8 ± 100mV, VDDQ = 1.4V to 1.9V, Commercial and Industrial Temperature Ranges) Symbol Parameter Clock Parameters t Clock ...
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Mb QDR II SRAM Burst of 2 Timing Waveform of Combined Read and Write Cycles Read A0 Write A1 Read tKHKL tKLKH K R tIVKH tKHIX ...
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Mb QDR II SRAM Burst of 2 IEEE 1149.1 TEST ACCESS PORT AND BOUNDARY SCAN-JTAG This part contains an IEEE standard 1149.1 Compatible Test Ac- cess Port (TAP). The package pads ...
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Mb QDR II SRAM Burst of 2 Scan Register Definition Part Instruction Register 512Kx36 3 bits 1Mx18 3 bits Identification Register Definitions INSTRUCTION FIELD ALL DEVICES Revision Number (31:29) 0x0284 Device ...
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Mb QDR II SRAM Burst of 2 Boundary Scan Exit Order ORDER PIN ...
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Mb QDR II SRAM Burst of 2 JTAG DC Operating Conditions Parameter Symbol I/O Power Supply V DDQ Power Supply Voltage V DD Input High Level V IH Input Low Level ...
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Mb QDR II SRAM Burst of 2 JTAG AC Characteristics Parameter Symbol Min TCK Cycle Time t 50 CHCH TCK High Pulse Width t 20 CHCL TCK Low Pulse Width t ...
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Mb QDR II SRAM Burst of 2 Package Diagram Outline for 165-Ball Fine Pitch Grid Array Commercial and IndustrialTemperature Range 6.42 19 ...
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Mb QDR II SRAM Burst of 2 Ordering Information S XXX 71P72XXX Device Power Speed Type Notes: 1) The 250MHz speed grade is not available in the 512K x36-bit option. 2) ...
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IDT71P72204 (2M x 8-Bit), 71P72104 (2M x 9-Bit), 71P72804 ( -Bit) 71P72604 (512K x 36-Bit QDR II SRAM Burst of 2 Revision History REVISION DATE PAGES 0 07/20/05 p.1-22 A 04/21/06 p.1-3,7-9 12,15,20 p. 7,11,17 ...