IDT71P72604S167BQ IDT, Integrated Device Technology Inc, IDT71P72604S167BQ Datasheet - Page 10

• Manufacturer Part Number: IDT71P72604S167BQ
• Description: IC SRAM 18MBIT 167MHZ 165FBGA
• Manufacturer: IDT, Integrated Device Technology Inc

Specifications of IDT71P72604S167BQ

• Format - Memory: RAM
• Memory Type: SRAM - Synchronous, QDR II
• Memory Size: 18M (512K x 36)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 1.7 V ~ 1.9 V
• Operating Temperature: 0°C ~ 70°C
• Package / Case: 165-FBGA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 71P72604S167BQ

Input Electrical Characteristics Over
the Operating Temperature and
Supply Voltage Range
(V
NOTES:
1.These are DC test criteria. DC design criteria is VREF + 50mV. The
2. VIH (Max) DC = VDDQ+0.3, VIH (Max) AC = VDD +0.5V (pulse
3. VIL (Min) DC = -0.3V, VIL (Min) AC = -0.5V (pulse width <20%
4. This conditon is for AC function test only, not for AC parameter test.
5. To maintain a valid level, the transitioning edge of the input must:
71P72804 (1M x 18-Bit) 71P72604 (512K x 36-Bit)
18 Mb QDR II SRAM Burst of 2
Input High Voltage, DC V
Input Low Voltage, DC
Input High Voltage, AC V
Input Low Voltage, AC
eters.
AC VIH/VIL levels are defined separately for measuring timing param
DD
width <20% tKHKH (min))
tKHKH (min))
a) Sustain a constant slew rate from the current AC level through the
b) Reach at least the target AC level.
c) After the AC target level is reached, continue to maintain at least the
target AC level, VIL(AC) or VIH(AC)
target DC level, VIL(DC) or VIH(DC)
= 1.8 ± 100mV, V
Parameter
Symbol
V
V
DDQ
IH (DC
IH (AC)
IL (DC)
IL (AC)
= 1.4V to 1.9V)
)
V
V
REF
REF
Min
-0.3
-
+0.2
+0.1 V
V
V
DDQ
REF
REF
Max
-
+0.3
-0.2
-0.1
Unit
V
V
V
V
6109 tbl 10d
Notes
1,2
1,3
4,5
4,5
6.42
10
Undershoot Timing
V
Overshoot Timing
V
V
V
SS
DD
DD
SS
-0.25V
+0.5
-0.5V
+0.25
V
V
V
V
DD
SS
IH
IL
Commercial and IndustrialTemperature Range
20% tKHKH (MIN)
20% tKHKH (MIN)
6109 drw 22
6109 drw 21