NAND512W3A2CN6E NUMONYX, NAND512W3A2CN6E Datasheet - Page 36

• Manufacturer Part Number: NAND512W3A2CN6E
• Description: IC FLASH 512MBIT 48TSOP
• Manufacturer: NUMONYX

Specifications of NAND512W3A2CN6E

• Format - Memory: FLASH
• Memory Type: FLASH - Nand
• Memory Size: 512M (64M x 8)
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Cell Type: NAND
• Density: 512Mb
• Access Time (max): 12us
• Interface Type: Parallel
• Boot Type: Not Required
• Address Bus: 26b
• Operating Supply Voltage (typ): 3/3.3V
• Operating Temp Range: -40C to 85C
• Package Type: TSOP
• Program/erase Volt (typ): 2.7 to 3.6V
• Sync/async: Asynchronous
• Operating Temperature Classification: Industrial
• Operating Supply Voltage (min): 2.7V
• Operating Supply Voltage (max): 3.6V
• Word Size: 8b
• Number Of Words: 64M
• Supply Current: 20mA
• Mounting: Surface Mount
• Pin Count: 48
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Speed: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Compliant

DC and AC parameters
Table 18.
1. Leakage currents double on stacked devices.
Figure 19. Equivalent testing circuit for AC characteristics measurement
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I
Symbol
OL
V
I
I
I
I
V
V
V
DD1
DD2
DD3
DD5
I
V
I
LKO
LO
OH
LI
OL
(RB)
IH
IL
Operating current
DC characteristics, 1.8 V devices
V
M
DD
Standby current (CMOS)
Output high voltage level
Output low voltage level
Output low current (RB)
Output leakage current
Input leakage current
supply voltage (erase and
Input high voltage
Input low voltage
program lockout)
Parameter
NAND flash
Sequential
Program
Erase
read
C L
GND
V
E=V
V
OUT
Test conditions
IN
t
(1)
RLRL
E = V
I
OH
I
OL
V
WP=0/V
= 0 to V
IL,
= 0 to V
OL
= -100 µA
= 100 µA
I
OUT
minimum
= 0.1 V
DD
–
–
–
–
–
- 0.2,
= 0 mA
DD
DD
DD
max
max
V DD
GND
2R ref
2R ref
V
V
DD
DD
Min
-0.3
–
–
–
–
–
–
–
3
–
- 0.4
-0.1
Ai11085
Typ
10
8
8
8
–
–
–
–
–
–
4
–
V
NAND512-A2C
DD
Max
±10
±10
0.4
0.1
1.1
15
15
15
50
-
+ 0.3
Unit
mA
mA
mA
mA
µA
µA
µA
V
V
V
V
V